Display device including sealing portion extension with improved coupling force

ABSTRACT

A display device includes a substrate, a switching element on the substrate, a pixel electrode disposed on the switching element and connected to the switching element, a light emitting layer on the pixel electrode, a common electrode on the light emitting layer, and a sealing portion on the common electrode. The sealing portion includes an organic layer, and at least one first composite inorganic layer disposed between the organic layer and the common electrode. The at least one first composite inorganic layer includes a first inorganic layer between the common electrode and the organic layer, and a second inorganic layer between the first inorganic layer and the organic layer. A refractive index of the first inorganic layer and a refractive index of the second inorganic layer are different from each other, and the first inorganic layer and the second inorganic layer contact each other.

This application is the national phase of International Application No.PCT/KR2019/001236, filed on Jan. 29, 2019, which claims priority toKorean Patent Applications No. 10-2018-0011478 filed on Jan. 30, 2018,and No. 10-2019-0009190 filed on January 24, and all the benefitsaccruing therefrom under 35 U.S.C. § 119, the content of which in theirentirety is herein incorporated by reference.

1. FIELD

Embodiments of the invention relate to a display device, and moreparticularly, to a display device improved in terms of an ultraviolet(“UV”) blocking ability, and to a method of manufacturing the displaydevice.

2. DISCUSSION OF RELATED ART

Display devices that have advantages of reduced weight and volume,compared to cathode ray tubes (“CRT”) which have disadvantages of largeweight and volume, may include liquid crystal display (“LCD”) devices,field emission display (“FED”) devices, plasma display panel (“PDP”)devices and organic light emitting diode (“OLED”) display devices, forexample.

Among such display devices, OLED display devices display images using anOLED which generates light by recombination of electrons and holes.

SUMMARY

When UV ray that is contained in sunlight is applied to a light blockinglayer of an organic light emitting diode (“OLED”) display devices, anout-gas may be generated from the light blocking layer that includes anorganic material. This out-gas may damage OLEDs, causing defects such aspixel shrinkage.

Embodiments of the invention may be directed to a display device havingan excellent UV-ray blocking ability, and to a method of manufacturingthe display device.

In an embodiment of the invention, a display device includes asubstrate, a switching element on the substrate, a pixel electrodedisposed on the switching element and connected to the switchingelement, a light emitting layer on the pixel electrode, a commonelectrode on the light emitting layer, and a sealing portion on thecommon electrode. The sealing portion includes an organic layer, and atleast one first composite inorganic layer disposed between the organiclayer and the common electrode. The at least one first compositeinorganic layer includes a first inorganic layer between the commonelectrode and the organic layer, and a second inorganic layer betweenthe first inorganic layer and the organic layer. a refractive index ofthe first inorganic layer and a refractive index of the second inorganiclayer are different from each other, and the first inorganic layer andthe second inorganic layer contact each other.

In an embodiment, the refractive index of the first inorganic layer maybe higher than the refractive index of the second inorganic layer.

In an embodiment, a difference between the refractive index of the firstinorganic layer and the refractive index of the second inorganic layermay be substantially equal to or more than about 0.4.

In an embodiment, the second inorganic layer included in one of adjacentones of the at least one first composite inorganic layers and the firstinorganic layer included in a remaining one of the adjacent ones of theat least one first composite inorganic layers may face each other, and arefractive index of the second inorganic layer included in the one ofthe adjacent ones of the at least one first composite inorganic layersand a refractive index of the first inorganic layer included in theremaining one of the adjacent ones of the at least one first compositeinorganic layers may be different from each other.

In an embodiment, the second inorganic layer included in the one of theadjacent ones of the at least one first composite inorganic layers andthe first inorganic layer included in the remaining one of the adjacentones of the at least one first composite inorganic layers may contacteach other.

In an embodiment, the second inorganic layer included in the one of theadjacent ones of the at least one first composite inorganic layers andthe second inorganic layer included in the remaining one of the adjacentones of the at least one first composite inorganic layers may have asubstantially equal refractive index.

In an embodiment, the first inorganic layer and the second inorganiclayer may include at least one of TiO₂, SiN_(x), AlO_(x), Al₂O₃ andSiO_(x).

In an embodiment, one of the first inorganic layer and the secondinorganic layer may include TiO₂, and a remaining one of the firstinorganic layer and the second inorganic layer may include Al₂O₃.

In an embodiment, the at least one first composite inorganic layer mayinclude at least five first composite inorganic layers.

In an embodiment, a total thickness of the at least five first compositeinorganic layers may be greater than about 0.5 micrometer and less thanabout 1 micrometer.

In an embodiment, the display device may further include a firstauxiliary inorganic layer between the at least one first compositeinorganic layer and the organic layer.

In an embodiment, a refractive index of the first auxiliary inorganiclayer may be substantially equal to the refractive index of the firstinorganic layer.

In an embodiment, the display device may further include at least onesecond composite inorganic layer disposed to oppose the at least onefirst composite inorganic layer with the organic layer interposedtherebetween.

In an embodiment, the at least one second composite inorganic layer mayinclude a first inorganic layer on the organic layer, and a secondinorganic layer on the first inorganic layer of the at least one secondcomposite inorganic layer.

In an embodiment, a refractive index of the first inorganic layer of theat least one second composite inorganic layer and a refractive index ofthe second inorganic layer of the at least one second compositeinorganic layer may be different from each other.

In an embodiment, the first inorganic layer of the at least one secondcomposite inorganic layer and the first inorganic layer of the at leastone first composite inorganic layer may have a substantially equalrefractive index, and the second inorganic layer of the at least onesecond composite inorganic layer and the second inorganic layer of theat least one first composite inorganic layer may have a substantiallyequal refractive index.

In an embodiment, the first inorganic layer of the at least one secondcomposite inorganic layer and the second inorganic layer of the at leastone second composite inorganic layer may contact each other.

In an embodiment, a difference between the refractive index of the firstinorganic layer included in the at least one second composite inorganiclayer and the refractive index of the second inorganic layer included inthe at least one second composite inorganic layer may be substantiallyequal to or more than about 0.4.

In an embodiment, the display device may further include a secondauxiliary inorganic layer between the at least one second compositeinorganic layer and the organic layer.

In an embodiment, a refractive index of the second auxiliary inorganiclayer may be substantially equal to a refractive index of the secondinorganic layer included in the at least one second composite inorganiclayer.

In an embodiment, the sealing portion may include at least one of alower inorganic layer between the organic layer and the at least onefirst composite inorganic layer, and an upper inorganic layer on theorganic layer.

In an embodiment, the display device may further include a protectivelayer between the common electrode and the at least one first compositeinorganic layer.

In an embodiment, the protective layer may include a capping layer onthe common electrode, and a metal layer on the capping layer.

In an embodiment, the capping layer may include an organic material, andthe metal layer may include LiF.

In an embodiment, an interface between the first inorganic layer and thesecond inorganic layer may have a first concavo-convex pattern.

In an embodiment, a surface of the second inorganic layer facing theinterface may have a second concavo-convex pattern.

In some embodiment, an arrangement direction of convex portions includedin the first concavo-convex pattern crosses an arrangement direction ofconvex portions included in the second concavo-convex pattern.

In an embodiment, the display device may further include a pixel circuitunit including the switching element, and a light blocking layerdisposed between the pixel circuit unit and the common electrode anddefining a light emission area at which the light emitting layer isdisposed. A first hole may be defined through the pixel circuit unit. Asecond hole corresponding to the first hole may be defined in the lightblocking layer. The substrate may include a first layer in which arecess corresponding to the first hole is defined, and a second layerwhich is disposed between the first layer and the pixel circuit unit andin which a third hole between the recess and the second hole is defined.The sealing portion may include a cover portion disposed on the commonelectrode, and an extension portion extending from the cover portion andinserted into the first hole, the second hole, the third hole, and therecess. The recess may have a width greater than a width of the thirdhole.

In an embodiment, the width of the recess gradually widens along adirection from the first layer toward the second layer.

In an embodiment, at least one of inner walls of the recess that faceeach other may be inclined at a predetermined angle with respect to aninterface between the first layer and the second layer.

In an embodiment, an angle between the at least one of the inner wallsof the recess that face each other and the interface may be an obtuseangle.

In an embodiment, the third hole may be surrounded by the recess in aplan view.

In an embodiment, the third hole and the recess may overlap each other.

In an embodiment, the first hole, the second hole, the third hole, andthe recess may be defined in at least one of a display area and anon-display area of the substrate.

In an embodiment, the first hole, the second hole, the third hole, andthe recess may be defined between a high potential line and a data linewhich are adjacent to each other in the display area.

In an embodiment, the light emitting layer may include quantum dots.

In an embodiment, the display device may further include a secondswitching element and a third switching element on the substrate, asecond pixel electrode disposed on the second switching element andconnected to the second switching element, a third pixel electrodedisposed on the third switching element and connected to the thirdswitching element, an opposing substrate on the sealing portion, a firstcolor conversion layer, between the sealing portion and the opposingsubstrate, disposed corresponding to the pixel electrode, a second colorconversion layer, between the sealing portion and the opposingsubstrate, disposed corresponding to the second pixel electrode, and alight transmission layer, between the sealing portion and the opposingsubstrate, disposed corresponding to the third pixel electrode. Thelight emitting layer may be disposed on the pixel electrode, the secondpixel electrode, and the third pixel electrode. The light emitting layermay emit a light having a first color. The first color conversion layermay convert the light having the first color into a light having asecond color. The second color conversion layer may convert the lighthaving the first color into a light having a third color.

In an embodiment, the display device may further include a first colorfilter layer, on the opposing substrate, disposed corresponding to thefirst color conversion layer, a second color filter layer, on theopposing substrate, disposed corresponding to the second colorconversion layer, and a third color filter layer, on the opposingsubstrate, disposed corresponding to the light transmission layer.

In an embodiment of the invention, a display device includes asubstrate, a switching element on the substrate, a pixel electrodedisposed on the switching element and connected to the switchingelement, a light emitting layer on the pixel electrode, a commonelectrode on the light emitting layer, and a sealing portion on thecommon electrode. The sealing portion includes an organic layer, and afirst composite inorganic layer between the common electrode and theorganic layer. The first composite inorganic layer includes a pluralityof first inorganic layers and a plurality of second inorganic layerswhich are arranged alternately along a direction from the commonelectrode toward the organic layer. A refractive index of a firstinorganic layer of the plurality of first inorganic layers and arefractive index of a second inorganic layer of the plurality of secondinorganic layers are different from each other, and the first inorganiclayer and the second inorganic layer which are adjacent to each othercontact each other.

In an embodiment of the invention, a method of manufacturing a displaydevice includes forming a switching element on a substrate, forming apixel electrode on the switching element, the pixel electrode connectedto the switching element, forming a light emitting layer on the pixelelectrode, forming a common electrode on the light emitting layer, andforming a sealing portion on the common electrode. The sealing portionincludes an organic layer, and at least one first composite inorganiclayer between the common electrode and the organic layer. The at leastone first composite inorganic layer includes a first inorganic layerbetween the common electrode and the organic layer, and a secondinorganic layer between the first inorganic layer and the organic layer.A refractive index of the first inorganic layer and a refractive indexof the second inorganic layer are different from each other, and thefirst inorganic layer and the second inorganic layer contact each other.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation in an embodiment of the invention willbecome more apparent by describing in detail embodiments thereof withreference to the accompanying drawings, in which:

FIG. 1 is a block diagram illustrating an embodiment of a display deviceaccording to the invention;

FIG. 2 is an equivalent circuit diagram illustrating one of pixelsillustrated in FIG. 1 ;

FIG. 3 is a detailed plan view illustrating a display device includingone of the pixels illustrated in FIG. 1 and lines connected thereto;

FIGS. 4A to 4G are views illustrating only part of elements of FIG. 3 ;

FIG. 5 is a cross-sectional view taken along line I-I′ of FIG. 3 ;

FIG. 6 is a cross-sectional view taken along line II-II′ of FIG. 3 ;

FIG. 7 is a view enlarging a portion A of FIG. 6 ;

FIG. 8 is a detailed plan view illustrating a display device including aplurality of pixels illustrated in FIG. 1 and lines connected thereto;

FIG. 9 is a cross-sectional view taken along line I-I′ of anotherembodiment of FIG. 3 ;

FIG. 10 is a cross-sectional view taken along line of another embodimentof FIG. 3 ;

FIG. 11 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 12 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 13 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 14 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 15 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 16 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 17 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 18 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 19 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 20 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 21 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 22 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 23 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 24 is a view enlarging a portion A of another embodiment of FIG. 9;

FIG. 25 is an exploded perspective view illustrating another embodimentof a composite inorganic layer of FIG. 11 ;

FIG. 26 is a diagram illustrating a change in transmittance of anembodiment of a composite inorganic multilayer depending on theapplication of sunlight;

FIG. 27 is a diagram illustrating a change in transmittance of anembodiment of the composite inorganic multilayer depending on theapplication of sunlight;

FIG. 28 is a diagram illustrating a change in transmittance of thecomposite inorganic multilayer according to another embodiment dependingon the application of sunlight;

FIG. 29 is a table showing an embodiment of a material and a refractiveindex of each inorganic layer included in the composite inorganic layer;

FIG. 30 is a table showing an embodiment of combinations of a compositeinorganic layer and transmittance of the combinations for eachwavelength;

FIG. 31 is a graph illustrating characteristics of each combination inFIG. 30 ;

FIG. 32A is a table showing transmittance of a composite inorganicmultilayer which is disposed on a SiN_(x) layer and includes SiN_(x) andSiO_(x);

FIG. 32B is a graph illustrating the transmittance of the compositeinorganic multilayer of FIG. 32A;

FIG. 32C is a view enlarging a partial wavelength range of FIG. 32B;

FIG. 33A is a table showing transmittance and thickness of a compositeinorganic layer which is disposed on a SiN_(x) layer and includes TiO₂and Al₂O₃;

FIG. 33B is a graph illustrating the transmittance of the compositeinorganic layer of FIG. 33A;

FIG. 33C is a view enlarging a partial wavelength range of FIG. 33B;

FIG. 34A is a table showing transmittance of a composite inorganicmultilayer including a TiO₂ layer and an inorganic layer having arefractive index less than that of TiO₂;

FIG. 34B is a graph illustrating the transmittance of each combinationof FIG. 34A;

FIG. 34C is a view enlarging a partial wavelength range of FIG. 34B;

FIG. 34D is a view enlarging another partial wavelength range of FIG.34B;

FIG. 35 is a view illustrating an embodiment of sealing portions andthicknesses of related layers;

FIG. 36 is a detailed configuration view illustrating an embodiment of adisplay device according to the invention; and

FIG. 37 is a detailed configuration view illustrating an embodiment of adisplay device according to the invention.

DETAILED DESCRIPTION

Embodiments will now be described more fully hereinafter with referenceto the accompanying drawings. Although the invention may be modified invarious manners and have several embodiments, embodiments areillustrated in the accompanying drawings and will be mainly described inthe specification. However, the scope of the invention is not limited tothe embodiments and should be construed as including all the changes,equivalents and substitutions included in the spirit and scope of theinvention.

In the drawings, thicknesses of a plurality of layers and areas areillustrated in an enlarged manner for clarity and ease of descriptionthereof. When a layer, area, or plate is referred to as being “on”another layer, area, or plate, it may be directly on the other layer,area, or plate, or intervening layers, areas, or plates may betherebetween. Conversely, when a layer, area, or plate is referred to asbeing “directly on” another layer, area, or plate, intervening layers,areas, or plates may be absent therebetween. Further when a layer, area,or plate is referred to as being “below” another layer, area, or plate,it may be directly below the other layer, area, or plate, or interveninglayers, areas, or plates may be therebetween. Conversely, when a layer,area, or plate is referred to as being “directly below” another layer,area, or plate, intervening layers, areas, or plates may be absenttherebetween.

The spatially relative terms “below”, “beneath”, “lower”, “above”,“upper” and the like, may be used herein for ease of description todescribe the relations between one element or component and anotherelement or component as illustrated in the drawings. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or operation, in addition tothe orientation depicted in the drawings. For example, in the case wherea device illustrated in the drawing is turned over, the device disposed“below” or “beneath” another device may be placed “above” anotherdevice. Accordingly, the illustrative term “below” may include both thelower and upper positions. The device may also be oriented in the otherdirection and thus the spatially relative terms may be interpreteddifferently depending on the orientations.

Throughout the specification, when an element is referred to as being“connected” to another element, the element is “directly connected” tothe other element, or “electrically connected” to the other element withone or more intervening elements interposed therebetween. It will befurther understood that the terms “comprises”, “comprising”, “includes”and/or “including”, when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof. It will be understood that, althoughthe terms “first”, “second”, “third”, and the like may be used herein todescribe various elements, these elements should not be limited by theseterms. These terms are only used to distinguish one element from anotherelement. Thus, “a first element” discussed below could be termed “asecond element” or “a third element”, and “a second element” and “athird element” may be termed likewise without departing from theteachings herein.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” may mean within one or morestandard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

Unless otherwise defined, all terms used herein (including technical andscientific terms) have the same meaning as commonly understood by thoseskilled in the art to which this invention pertains. It will be furtherunderstood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an ideal or excessively formal sense unlessclearly defined at the specification.

Some of the parts which are not associated with the description may notbe provided in order to specifically describe embodiments of theinvention and like reference numerals refer to like elements throughoutthe specification.

Hereinafter, a display device and a method of manufacturing the displaydevice according to embodiments of the invention will be described indetail with reference to FIGS. 1 to 37 .

FIG. 1 is a block diagram illustrating an embodiment of a display deviceaccording to the invention.

A display device 5555 in an embodiment of the invention includes asubstrate 100, a scan driver 102, an emission control driver 103, a datadriver 104 and a power supplier 105, as illustrated in FIG. 1 .

On the substrate 100, “i+2” number of scan lines SL0 to SLi+1, “k”number of emission control lines EL1 to ELk, “j” number of data linesDL1 to DLj and “k×j (k multiplied by j)” number of pixels PX, the scandriver 102, the emission control driver 103 and the data driver 104 aredisposed, where each of i, j and k is a natural number greater than 1.

The plurality of pixels PX is disposed in a display area 100 a of thesubstrate 100.

The “i+2” number of scan lines SL0 to SLi+1, the “k” number of emissioncontrol lines EL1 to ELk, and the “j” number of data lines DL1 to DLjare disposed in the display area 100 a of the substrate 100. In such anembodiment, the “i+2” number of scan lines SL0 to SLi+1 extend to anon-display area 100 b to be connected to the scan driver 102, the “k”number of emission control lines EL1 to Elk extend to the non-displayarea 100 b to be connected to the emission control driver 103, and the“j” number of data lines DL1 to DLj extend to the non-display area 100 bto be connected to the data driver 104.

The scan driver 102 and the emission control driver 103 may bemanufactured on the substrate 100 through a process substantially thesame as a process in which the pixel PX is provided. In an embodiment,switching elements of the scan driver 102, switching elements of theemission control driver 103 and switching elements of the pixel PX maybe disposed on the substrate 100 through a photolithography process, forexample.

In another embodiment, the emission control driver 103 may be embeddedin the scan driver 102. In an embodiment, the scan driver 102 mayfurther perform the function of the emission control driver 103, forexample. In such an embodiment, the scan lines SL0 to SLi+1 and theemission control lines EL1 to ELk are driven together by the scan driver102.

The data driver 104 may be manufactured in the form of a chip. The datadriver 104 may be attached on the substrate 100 in a chip bondingmanner. In an embodiment, the data driver 104 may be disposed on aseparate printed circuit board (“PCB”) (not illustrated) instead of thesubstrate 100, in which case the data lines DL1 to DLj are connected tothe data driver 104 through the PCB. In an embodiment, the data driver104 may be disposed in an upper portion of the substrate 100 and otherelements may be disposed in a lower portion of the substrate 100 withreference to a horizontal line 77 in a plan view.

In an embodiment, each of the scan driver 102 and the emission controldriver 103 may be manufactured in the form of a chip. The chip-type scandriver 102 may be disposed in the non-display area 100 b of thesubstrate 100 or at another separate PCB (not illustrated). Thechip-type emission control driver 103 may be disposed in the non-displayarea 100 b of the substrate 100 or at another separate PCB (notillustrated).

The scan lines SL0 to SLi+1 are arranged along a Y-axis direction, andeach of the scan lines SL0 to SLi+1 extends along an X-axis direction.The emission control lines EL1 to ELk are arranged along the Y-axisdirection, and each of the emission control lines EL1 to ELk extendsalong the X-axis direction. The data lines DL1 to DLj are arranged alongthe X-axis direction, and each of the data lines DL1 to DLj extendsalong the Y-axis direction.

A scan line SL0 of the aforementioned scan lines SL0 to SLi+1 that isclosest to the data driver 104 is defined as a first dummy scan lineSL0, a scan line SLi+1 of the aforementioned scan lines SL0 to SLi+1that is farthest from the data driver 104 is defined as a second dummyscan line SLi+1. In addition, the scan lines SL1 to SLi between thefirst dummy scan line SL0 and the second dummy scan line SLi+1 arerespectively defined as first to i-th scan lines SL1 to SLi sequentiallyfrom a scan line that is close to the data driver 104.

The scan driver 102 generates scan signals according to a scan controlsignal provided from a timing controller (not illustrated), andsequentially applies the scan signals to the plurality of scan lines SL0to SLi+1. The scan driver 102 outputs first to i-th scan signals, afirst dummy scan signal, and a second dummy scan signal. The first toi-th scan signals output from the scan driver 102 are applied to thefirst to i-th scan lines SL1 to SLi, respectively. In an embodiment, ann-th scan signal is applied to an n-th scan line SLn, where n is anatural number greater than or equal to 1 and less than or equal to i,for example. In addition, the first dummy scan signal output from thescan driver 102 is applied to the first dummy scan line SL0, and thesecond dummy scan signal output from the scan driver 102 is applied tothe second dummy scan line SLi+1.

During one frame period, the scan driver 102 outputs the first to i-thscan signals sequentially from the first scan signal. In such anembodiment, the scan driver 102 outputs the first dummy scan signalprior to the first scan signal, and outputs the second dummy scan signallater than the i-th scan signal. In other words, the scan driver 102outputs the first dummy scan signal firstly during said one frameperiod, and outputs the second dummy scan signal lastly during the oneframe period. Accordingly, during one frame period, the entire scanlines SL0 to SLi+1 including the dummy scan lines SL0 and SLi+1 aredriven sequentially from the first dummy scan line SL0.

The emission control driver 103 generates emission control signalsaccording to a control signal provided from a timing controller (notillustrated) and sequentially applies the emission control signals tothe plurality of emission control lines EL1 to ELk. First to m-themission control signals output from the emission control driver 103 areapplied to first to m-th emission control lines EL1 to ELm,respectively. In an embodiment, an m-th emission control signal isapplied to an m-th emission control line ELm, where m is a naturalnumber greater than or equal to 1 and less than or equal to k, forexample. During one frame period, the emission control driver 103outputs the first to k-th emission control signals sequentially from thefirst emission control signal. Accordingly, during one frame period, theentire emission control lines EL1 to ELk are driven sequentially fromthe first emission control line EL1.

The data driver 104 applies first to j-th data voltages to the first toj-th data lines DL1 to DLj, respectively. In an embodiment, the datadriver 104 receives image data signals and a data control signal from atiming controller (not illustrated), for example. In addition, the datadriver 104 samples the image data signals according to the data controlsignal, sequentially latches the sampled image data signalscorresponding to one horizontal line in each horizontal period, andapplies the latched image data signals to the data lines DL1 to DLj atthe substantially same time.

The pixels PX are arranged on the substrate 100 in the display area 100a in the form of a matrix. The pixels PX emit lights having differentcolors from each other. In an embodiment, between pixels PX illustratedin FIG. 1 , a pixel indicated by a reference character “R” is a redpixel which emits a red light, a pixel indicated by a referencecharacter “G” is a green pixel which emits a green light and a pixelindicated by a reference character “B” is a blue pixel which emits ablue light, for example.

In an embodiment, although not illustrated, the display device in anembodiment of the present disclosure may further include at least onewhite pixel which emits a white light. The white pixel may be disposedon the substrate 100 in the display area 100 a.

One pixel is connected to at least one scan line. In an embodiment, asillustrated in FIG. 1 , between a plurality of pixels PX connected tothe first data line DL1, a blue pixel that is closest to the data driver104 is connected to three scan lines that receives scan signals havingdifferent output timings, e.g., the first dummy scan line SL0, the firstscan line SL1 and the second scan line SL2. In such an embodiment,between a plurality of pixels PX connected to the second data line DL2,a green pixel which is third farthest from the data driver 104 isconnected to three scan lines that receives scan signals applied withdifferent output timings, e.g., the fourth scan line SL4, the fifth scanline SL5 and the sixth scan line SL6.

In an embodiment, pixels that are connected in common to a same dataline and disposed adjacent to each other are connected in common to atleast one scan line. In other words, two adjacent ones of the pixelsconnected to a same data line which are adjacent to each other in theY-axis direction share at least one scan line. In an embodiment, forexample, a green pixel (hereinafter, also referred to as “a first greenpixel”) which is connected to the second data line DL2 and is closest tothe data driver 104 and a green pixel (hereinafter, also referred to as“a second green pixel”) which is connected to the second data line DL2and is second farthest from the data driver 104 are disposed adjacent toeach other, and the first green pixel and the second green pixel areconnected in common to the second scan line SL2. In another embodiment,when defining a green pixel, that is connected to the second data lineDL2 and is third farthest from the data driver 104 as a third greenpixel, the third green pixel and the second green pixel are connected incommon to the fourth scan line SL4.

Pixels connected in common to a same data line are independentlyconnected to one or more different scan lines. In an embodiment, forexample, the first green pixel described above is connectedindependently to the first scan line SL1, the second green pixeldescribed above is connected independently to the third scan line SL3,and the third green pixel described above is connected independently tothe fifth scan line SL5.

As such, each of pixels connected to a same data line is independentlyconnected to at least one scan line. As used herein, the meaning of atleast two pixels (e.g., the first pixel PX1 and the second pixel PX2)being connected to different scan lines is that at least one of scanlines connected to the first pixel PX1 is different from at least one ofscan lines connected to the second pixel PX2. Accordingly, pixelsconnected to a same data line are connected to different scan lines,respectively.

As used herein, the meaning of at least two pixels (e.g., the firstpixel PX1 and the second pixel PX2) being connected to a same scan lineis that scan lines connected to the first pixel PX1 are completely thesame as scan lines connected to the second pixel PX2. Accordingly, eachof pixels connected to a same emission control line is connected to samescan lines. In an embodiment, pixels connected in common to the secondemission control line EL2 are connected in common to the second scanline SL2, the third scan line SL3 and the fourth scan line SL4, forexample.

The red pixel and the blue pixel are connected to a (2p−1)-th data lineand the green pixel is connected to a 2p-th data line, where p is anatural number. In an embodiment, for example, when p is one, the redpixel and the blue pixel are connected to the first data line DL1, andthe green pixel is connected to the second data line DL2.

One pixel (hereinafter, also referred to as “a first predeterminedpixel”) connected to a (2p−1)-th data line (e.g., the first data lineDL1) and one pixel (hereinafter, also referred to as “a secondpredetermined pixel”) connected to another (2p−1)-th data line (e.g.,the third data line DL3) may be connected to a same scan line, and insuch an embodiment, the first predetermined pixel emits a light having acolor different from a color of a light emitted from the secondpredetermined pixel. In an embodiment, for example, the firstpredetermined pixel may be a blue pixel connected to the first dummyscan line SL0, the first scan line SL1, the second scan line SL2, andthe first data line DL1, and the second predetermined pixel may be a redpixel connected to the first dummy scan line SL0, the first scan lineSL1, the second scan line SL2, and the third data line DL3.

Two adjacent pixels that are connected to a same data line (e.g., the(2p−1)-th data line) and emit lights having different colors from eachother, and at least one green pixel adjacent to one of the two adjacentpixels are included in a unit pixel for displaying a unit image. In anembodiment, for example, a red pixel connected to the third data lineDL3 and the first scan line SL1, a blue pixel connected to the thirddata line DL3 and the third scan line SL3, a green pixel connected tothe second data line DL2 and the first scan line SL1, and a green pixelconnected to the fourth data line DL4 and the first scan line SL1 maycollectively define a unit pixel.

Each pixel PX commonly receives a high potential driving voltage ELVDD,a low potential driving voltage ELVSS and an initializing voltage Vinitfrom the power supplier 105. In such an embodiment, each pixel PXreceives all of the high potential driving voltage ELVDD, the lowpotential driving voltage ELVSS and the initializing voltage Vinit.

FIG. 2 is an equivalent circuit diagram illustrating one of pixelsillustrated in FIG. 1 .

In an embodiment, a pixel may include a first switching element T1, asecond switching element T2, a third switching element T3, a fourthswitching element T4, a fifth switching element T5, a sixth switchingelement T6, a seventh switching element T7, a storage capacitor Cst anda light emitting element (hereinafter, also referred to as a lightemitting diode (“LED”)).

In an embodiment, each of the first, second, third, fourth, fifth, sixthand seventh switching elements T1, T2, T3, T4, T5, T6 and T7 may be aP-type transistor, for example, as illustrated in FIG. 2 . However, theinvention is not limited thereto, and in another embodiment, each of thefirst, second, third, fourth, fifth, sixth and seventh switchingelements T1, T2, T3, T4, T5, T6 and T7 may be an N-type transistor, forexample.

The first switching element T1 includes a gate electrode connected to afirst node n1 and is connected between a second node n2 and a third noden3. One of a source electrode and a drain electrode of the firstswitching element T1 is connected to the second node n2, and the otherof the source electrode and the drain electrode of the first switchingelement T1 is connected to the third node n3.

The second switching element T2 includes a gate electrode connected tothe n-th scan line SLn and is connected between the data line DL and thesecond node n2. One of a source electrode and a drain electrode of thesecond switching element T2 is connected to the data line DL, and theother of the source electrode and the drain electrode of the secondswitching element T2 is connected to the second node n2. An n-th scansignal SSn is applied to the n-th scan line SLn.

The third switching element T3 includes a gate electrode connected tothe n-th scan line SLn and is connected between the first node n1 andthe third node n3. One of a source electrode and a drain electrode ofthe third switching element T3 is connected to the first node n1, andthe other of the source electrode and the drain electrode of the thirdswitching element T3 is connected to the third node n3.

The fourth switching element T4 includes a gate electrode connected toan (n−1)-th scan line SLn−1 and is connected between the first node n1and an initialization line IL. One of a source electrode and a drainelectrode of the fourth switching element T4 is connected to the firstnode n1, and the other of the source electrode and the drain electrodeof the fourth switching element T4 is connected to the initializationline IL. The initializing voltage Vinit is applied to the initializationline IL, and an (n−1)-th scan signal SSn−1 is applied to the (n−1)-thscan line SLn−1.

The fifth switching element T5 includes a gate electrode connected tothe emission control line EL, and is connected between the second noden2 and a high potential line VDL which is one of power supply lines. Oneof a source electrode and a drain electrode of the fifth switchingelement T5 is connected to the high potential line VDL, and the other ofthe source electrode and the drain electrode of the fifth switchingelement T5 is connected to the second node n2. The high potentialdriving voltage ELVDD is applied to the high potential line VDL.

The sixth switching element T6 includes a gate electrode connected tothe emission control line EL and is connected between the third node n3and a fourth node n4. One of a source electrode and a drain electrode ofthe sixth switching element T6 is connected to the third node n3 and theother of the source electrode and the drain electrode of the sixthswitching element T6 is connected to the fourth node n4. An emissioncontrol signal ES is applied to the emission control line EL.

The seventh switching element T7 includes a gate electrode connected toan (n+1)-th scan line SLn+1 and is connected between the initializationline IL and the fourth node n4. One of a source electrode and a drainelectrode of the seventh switching element T7 is connected to theinitialization line IL, and the other of the source electrode and thedrain electrode of the seventh switching element T7 is connected to thefourth node n4. An (n+1)-th scan signal SSn+1 is applied to the (n+1)-thscan line SLn+1.

The storage capacitor Cst is connected between the high potential lineVDL and the first node n1. The storage capacitor Cst stores a signalapplied to the gate electrode of the first switching element T1 for oneframe period.

The LED emits light corresponding to a driving current applied throughthe first switching element T1. The LED emits light with brightnessdepending on the magnitude of the driving current. An anode electrode ofthe LED is connected to the fourth node n4, and a cathode electrode ofthe LED is connected to a low potential line VSL which is another of thepower supply lines. The low potential driving voltage ELVSS is appliedto this low potential line VSL. In an embodiment, the LED may be anorganic light emitting diode (“OLED”), for example. The anode electrodeof the LED corresponds to a pixel electrode to be described below, andthe cathode electrode of the LED corresponds to a common electrode to bedescribed below.

The fourth switching element T4 is turned on when the (n−1)-th scansignal SSn−1 is applied to the (n−1)-th scan line SLn−1. Theinitializing voltage Vinit is applied to the first node n1 (i.e., thegate electrode of the first switching element T1) through the turned-onfourth switching element T4. Accordingly, the voltage of the gateelectrode of the first switching element T1 is initialized.

The second switching element T2 and the third switching element T3 areturned on when the n-th scan signal SSn is applied to the n-th scan lineSLn, and therefore the first switching element T1 is diode-connectedthrough the turned-on third switching element T3. In addition, a datavoltage DA is applied to the second node n2 through the turned-on secondswitching element T2. Accordingly, a threshold voltage of the firstswitching element T1 is detected, and the threshold voltage is stored inthe storage capacitor Cst.

The fifth switching element T5 and the sixth switching element T6 areturned on when the emission control signal ES is applied to the emissioncontrol line EL. A driving current is applied to the LED through theturned-on fifth switching element T5, the turned-on first switchingelement T1, and the turned-on sixth switching element T6, such that theLED emits light.

The seventh switching element T7 is turned on when the (n+1)-th scansignal SSn+1 is applied to the (n+1)-th scan line SLn+1. Theinitializing voltage Vinit is applied to the fourth node n4 (i.e., theanode electrode of the LED) through the turned-on seventh switchingelement T7. Accordingly, the LED is biased in a reverse direction suchthat the LED is turned off.

FIG. 3 is a detailed plan view illustrating a display device includingone of the pixels illustrated in FIG. 1 and lines connected thereto,FIGS. 4A to 4G are views illustrating only part of elements of FIG. 3 ,and FIG. 5 is a cross-sectional view taken along line I-I′ of FIG. 3 .

Specifically, FIG. 4A is a view illustrating a semiconductor layer 321of FIG. 3 , FIG. 4B is a view illustrating the (n−1)-th scan line SLn−1,the n-th scan line SLn, the (n+1)-th scan line SLn+1, and the emissioncontrol line EL of FIG. 3 , FIG. 4C is a view illustrating theinitialization line IL and a capacitor electrode 201 of FIG. 3 , FIG. 4Dshows the data line DL and the high potential line VDL of FIG. 3 , FIG.4E is a view illustrating the pixel electrode PE of FIG. 3 , FIG. 4F isa view illustrating the semiconductor layer 321, the (n−1)-th scan lineSLn−1, the n-th scan line SLn, the (n+1)-th scan line SLn+1, and theemission control line EL of FIG. 3 , and FIG. 4G is a view illustratinga first connection electrode 701, a second connection electrode 702, athird connection electrode 703, the data line DL, the high potentialline VDL, and a light blocking layer 190 of FIG. 3 .

A display device in an embodiment of the invention may include asubstrate 100, a pixel circuit unit 200, a light blocking layer 190, aspacer 422, an LED, and a sealing portion 750, as illustrated in FIGS. 3to 5 .

As illustrated in FIGS. 3 and 4F, the first switching element T1 of thepixel circuit unit 200 includes a first gate electrode GE1, a firstsource electrode SE1 and a first drain electrode DE1.

As illustrated in FIGS. 3 and 4F, the second switching element T2 of thepixel circuit unit 200 includes a second gate electrode GE2, a secondsource electrode SE2 and a second drain electrode DE2.

As illustrated in FIGS. 3 and 4F, the third switching element T3 of thepixel circuit unit 200 includes a third gate electrode GE3, a thirdsource electrode SE3 and a third drain electrode DE3.

As illustrated in FIGS. 3 and 4F, the fourth switching element T4 of thepixel circuit unit 200 includes a fourth gate electrode GE4, a fourthsource electrode SE4 and a fourth drain electrode DE4.

As illustrated in FIGS. 3 and 4F, the fifth switching element T5 of thepixel circuit unit 200 includes a fifth gate electrode GE5, a fifthsource electrode SE5 and a fifth drain electrode DE5.

As illustrated in FIGS. 3 and 4F, the sixth switching element T6 of thepixel circuit unit 200 includes a sixth gate electrode GE6, a sixthsource electrode SE6 and a sixth drain electrode DE6.

As illustrated in FIGS. 3 and 4F, the seventh switching element T7 ofthe pixel circuit unit 200 includes a seventh gate electrode GE7, aseventh source electrode SE7 and a seventh drain electrode DE7.

The substrate 100 illustrated in FIG. 5 may include at least two layers.In an embodiment, the substrate 100 may include a base layer 110, afirst layer 111, a second layer 112, a third layer 113, and a fourthlayer 114 arranged along a Z-axis direction, for example. The firstlayer 111 is disposed between the base layer 110 and the second layer112, the second layer 112 is disposed between the first layer 111 andthe third layer 113, the third layer 113 is disposed between the secondlayer 112 and the fourth layer 114, and the fourth layer 114 is disposedbetween the third layer 113 and a buffer layer 120 of the pixel circuitunit 200.

The first layer 111 may have a thickness greater than a thickness of thesecond layer 112. As used herein, the thickness means a size measured inthe Z-axis direction.

The third layer 113 may have a thickness greater than a thickness of thefourth layer 114. As used herein, the thickness means a size measured inthe Z-axis direction.

The first layer 111 and the third layer 113 may have a substantiallyequal thickness. As used herein, the thickness means a size measured inthe Z-axis direction.

The second layer 112 and the fourth layer 114 may have a substantiallyequal thickness. As used herein, the thickness means a size measured inthe Z-axis direction.

The base layer 110 may be a glass substrate or a film.

In an embodiment, the first layer 111 may include or consist of glass ortransparent plastic, for example. In addition, the first layer 111 mayinclude an organic material. In an embodiment, the first layer 111 mayinclude one of kapton, polyethersulphone (“PES”), polycarbonate (“PC”),polyimide (“PI”), polyethyleneterephthalate (“PET”), polyethylenenaphthalate (“PEN”), polyacrylate (“PAR”), fiber reinforced plastic(“FRP”) and the like, for example.

The second layer 112 may include an inorganic material. In anembodiment, the second layer 112 may include or consist of at least oneof a silicon nitride (SiN_(x)) layer, a silicon oxide (SiO₂) layer andan oxynitride (SiO_(x)N_(y)) layer, for example.

The third layer 113 may include or consist of a material substantiallythe same as a material included in the first layer 111 described above.

The fourth layer 114 may include or consist of a material substantiallythe same as a material included in the second layer 112 described above.

As illustrated in FIG. 5 , the pixel circuit unit 200 is disposed on thesubstrate 100. In an embodiment, the pixel circuit unit 200 is disposedon the fourth layer 114 of the substrate 100, for example.

The pixel circuit unit 200 may include the buffer layer 120, thesemiconductor layer 321, a gate insulating layer 140, the first gateelectrode GE1, the second gate electrode GE2, the third gate electrodeGE3, the fourth gate electrode GE4, the fifth gate electrode GE5, thesixth gate electrode GE6, the seventh gate electrode GE7, the (n−1)-thscan line SLn−1, the n-th scan line SLn, the (n+1)-th scan line SLn+1,the emission control line EL, a first insulating interlayer 150, theinitialization line IL, a capacitor electrode 201, a second insulatinginterlayer 160, the first connection electrode 701, the secondconnection electrode 702, the third connection electrode 703, the dataline DL, the high potential line VDL, and a planarization layer 180, forexample.

The buffer layer 120 is disposed on the fourth layer 114 of thesubstrate 100. The buffer layer 120 may be disposed over an entiresurface of the fourth layer 114. In an embodiment, the buffer layer 120may overlap the entire surface of the fourth layer 114, for example.

The buffer layer 120 prevents permeation of undesirable elements andplanarizes a surface therebelow and may include suitable materials forplanarizing and/or preventing permeation. In an embodiment, the bufferlayer 120 may include one of the followings a silicon nitride (SiN_(x))layer, a silicon oxide (SiO₂) layer and a silicon oxynitride(SiO_(x)N_(y)) layer, for example. However, the buffer layer 120 is notinvariably necessary and may be omitted based on the kinds of thesubstrate 100 and process conditions thereof.

As illustrated in FIG. 5 , the semiconductor layer 321 is disposed onthe buffer layer 120.

As illustrated in FIG. 4A, the semiconductor layer 321 providesrespective channel areas CH1, CH2, CH3, CH4, CH5, CH6 and CH7 of thefirst, second, third, fourth, fifth, sixth and seventh switchingelements T1, T2, T3, T4, T5, T6 and T7. In addition, the semiconductorlayer 321 provides the respective source electrodes SE1, SE2, SE3, SE4,SE5, SE6 and SE7 and the respective drain electrodes DE1, DE2, DE3, DE4,DE5, DE6 and DE7 of the first, second, third, fourth, fifth, sixth andseventh switching elements T1, T2, T3, T4, T5, T6 and T7.

To this end, the semiconductor layer 321 may include the first channelarea CH1, the second channel area CH2, the third channel area CH3, thefourth channel area CH4, the fifth channel area CH5, the sixth channelarea CH6, the seventh channel area CH7, the first source electrode SE1,the second source electrode SE2, the third source electrode SE3, thefourth source electrode SE4, the fifth source electrode SE5, the sixthsource electrode SE6, the seventh source electrode SE7, the first drainelectrode DE1, the second drain electrode DE2, the third drain electrodeDE3, the fourth drain electrode DE4, the fifth drain electrode DE5, thesixth drain electrode DE6, and the seventh drain electrode DE7.

The first source electrode SE1, the second drain electrode DE2 and thefifth drain electrode DE5 are connected to each other. In an embodiment,the first source electrode SE1, the second drain electrode DE2 and thefifth drain electrode DE5 may be integrally provided as a single unitaryand indivisible unit provided unitarily, for example.

The first drain electrode DE1, the third source electrode SE3 and thesixth source electrode SE6 are connected to each other. In anembodiment, the first drain electrode DE1, the third source electrodeSE3 and the sixth source electrode SE6 may be integrally provided as asingle unitary and indivisible unit provided unitarily, for example.

The third drain electrode DE3 and the fourth drain electrode DE4 areconnected to each other. In an embodiment, the third drain electrode DE3and the fourth drain electrode DE4 may be integrally provided as asingle unitary and indivisible unit provided unitarily, for example.

The sixth drain electrode DE6 and the seventh source electrode SE7 areconnected to each other. In an embodiment, the sixth drain electrode DE6and the seventh source electrode SE7 may be integrally provided as asingle unitary and indivisible unit provided unitarily, for example.

In an embodiment, the semiconductor layer 321 may include apolycrystalline silicon layer, an amorphous silicon layer and an oxidesemiconductor such as indium gallium zinc oxide (“IGZO”) or indium zinctin oxide (“IZTO”). In an embodiment, in the case where thesemiconductor layer 321 includes a polycrystalline silicon layer, thesemiconductor layer 321 may include a channel area which is not dopedwith an impurity and a source electrode and a drain electrode, on theopposite sides of the channel area, which are doped with impurities, forexample.

As illustrated in FIG. 5 , the gate insulating layer 140 is disposed onthe semiconductor layer 321 and the buffer layer 120. In an embodiment,the gate insulating layer 140 may include at least one oftetraethylorthosilicate (“TEOS”), silicon nitride (SiN_(x)) and siliconoxide (SiO₂), for example. In an embodiment, the gate insulating layer140 may have a double-layer structure where a SiN_(x) layer having athickness of about 40 nanometers (nm) and a TEOS layer having athickness of about 80 nm are sequentially stacked, for example.

As illustrated in FIG. 5 , the first gate electrode GE1 is disposed onthe gate insulating layer 140. In an embodiment, the first gateelectrode GE1 is disposed between the gate insulating layer 140 and thefirst insulating interlayer 150, for example.

Although not illustrated in FIG. 5 , the second gate electrode GE2, thethird gate electrode GE3, the fourth gate electrode GE4, the fifth gateelectrode GE5, the sixth gate electrode GE6, and the seventh gateelectrode GE7 are also disposed on the gate insulating layer 140. In anembodiment, the second, third, fourth, fifth, sixth and seventh gateelectrodes GE2, GE3, GE4, GE5, GE6 and GE7 are disposed between the gateinsulating layer 140 and the first insulating interlayer 150, forexample.

Although not illustrated in FIG. 5 , the scan lines and the emissioncontrol lines are also disposed on the gate insulating layer 140. In anembodiment, the (n−1)-th scan line SLn−1, the n-th scan line SLn, the(n+1)-th scan line SLn+1 and the emission control line EL are disposedbetween the gate insulating layer 140 and the first insulatinginterlayer 150, for example.

As illustrated in FIGS. 3 and 4F, the first gate electrode GE1 overlapsthe first channel area CH1 of the semiconductor layer 321, the secondgate electrode GE2 overlaps the second channel area CH2 of thesemiconductor layer 321, the third gate electrode GE3 overlaps the thirdchannel area CH3 of the semiconductor layer 321, the fourth gateelectrode GE4 overlaps the fourth channel area CH4 of the semiconductorlayer 321, the fifth gate electrode GE5 overlaps the fifth channel areaCH5 of the semiconductor layer 321, the sixth gate electrode GE6overlaps the sixth channel area CH6 of the semiconductor layer 321, andthe seventh gate electrode GE7 overlaps the seventh channel area CH7 ofthe semiconductor layer 321.

As illustrated in FIGS. 4B and 4F, the fourth gate electrode GE4 isconnected to the (n−1)-th scan line SLn−1, and in such an embodiment,the fourth gate electrode GE4 may be defined by a portion of the(n−1)-th scan line SLn−1. In an embodiment, a portion of the (n−1)-thscan line SLn−1 that overlaps the semiconductor layer 321 may correspondto the fourth gate electrode GE4, for example.

As illustrated in FIGS. 4B and 4F, the third gate electrode GE3 isconnected to the n-th scan line SLn, and in such an embodiment, thethird gate electrode GE3 may be defined by a portion of the n-th scanline SLn. In an embodiment, a portion of the n-th scan line SLn thatoverlaps the semiconductor layer 321 may correspond to the third gateelectrode GE3, for example.

As illustrated in FIGS. 4B and 4F, the seventh gate electrode GE7 isconnected to the (n+1)-th scan line SLn+1, and in such an embodiment,the seventh gate electrode GE7 may be defined by a portion of the(n+1)-th scan line SLn+1. In an embodiment, a portion of the (n+1)-thscan line SLn+1 that overlaps the semiconductor layer 321 may correspondto the seventh gate electrode GE7, for example.

As illustrated in FIGS. 4B and 4F, the fifth gate electrode GE5 and thesixth gate electrode GE6 are connected in common to one emission controlline EL, and in such an embodiment, the fifth gate electrode GE5 and thesixth gate electrode GE6 may be portions of the emission control lineEL. In an embodiment, two portions of the emission control line EL thatoverlap the semiconductor layer 321 may correspond to the fifth gateelectrode GE5 and the sixth gate electrode GE6, respectively, forexample.

In an embodiment, the scan line (e.g., at least one of the (n−1)-th scanline SLn−1, the n-th scan line SLn and the (n+1)-th scan line SLn+1) mayinclude at least one of aluminum (Al) or alloys thereof, silver (Ag) oralloys thereof, copper (Cu) or alloys thereof and molybdenum (Mo) oralloys thereof, for example. In an alternative embodiment, the scan linemay include chromium (Cr), tantalum (Ta), and/or titanium (Ti), forexample. In an embodiment, the scan line may have a multilayer structureincluding at least two conductive layers that have different physicalproperties from each other.

The first, second, third, fourth, fifth, sixth and seventh gateelectrodes GE1, GE2, GE3, GE4, GE5, GE6 and GE7 may include asubstantially same material and have a substantially same structure(e.g., a multilayer structure) as those of the scan line describedabove. Each of the gate electrodes GE1, GE2, GE3, GE4, GE5, GE6 and GE7and the scan line may be provided at the substantially same time in asubstantially same process.

In addition, the emission control line EL may include a substantiallysame material and have a substantially same structure (e.g., amultilayer structure) as those of the above-described scan line (e.g.,SLn). The emission control line EL and the scan line may be provided atthe substantially same time in a substantially same process.

As illustrated in FIG. 5 , the first insulating interlayer 150 isdisposed on the first gate electrode GE1 and the gate insulating layer140. The first insulating interlayer 150 may have a thickness greaterthan a thickness of the gate insulating layer 140. The first insulatinginterlayer 150 may include a material substantially the same as amaterial included in the gate insulating layer 140 described above.

Although not illustrated in FIG. 5 , the first insulating interlayer 150is also disposed on the second, third, fourth, fifth, sixth and seventhgate electrodes GE2, GE3, GE4, GE5, GE6 and GE7, each scan line (e.g.,scan lines SLn−1, SLn, SLn+1) and the emission control line EL.

As illustrated in FIG. 5 , the capacitor electrode 201 is disposed onthe first insulating interlayer 150. In an embodiment, the capacitorelectrode 201 is disposed between the first insulating interlayer 150and the second insulating interlayer 160, for example. The capacitorelectrode 201 defines a storage capacitor Cst together with the firstgate electrode GE1 described above. In an embodiment, the first gateelectrode GE1 corresponds to a first electrode of the storage capacitorCst, and the capacitor electrode 201 corresponds to a second electrodeof the storage capacitor Cst, for example. In an embodiment, a portionof the first gate electrode GE1 that overlaps the capacitor electrode201 corresponds to the first electrode of the storage capacitor Cst, anda portion of the capacitor electrode 201 that overlaps the first gateelectrode GE1 corresponds to the second electrode of the storagecapacitor Cst, for example.

Although not illustrated in FIG. 5 , the initialization line IL (referto FIGS. 3 and 4C) is also disposed on the first insulating interlayer150. In an embodiment, the initialization line IL is disposed betweenthe first insulating interlayer 150 and the second insulating interlayer160, for example.

As illustrated in FIGS. 3 and 4C, a hole 30 is defined in the capacitorelectrode 201. In an embodiment, the hole 30 may have a quadrangularshape, for example. However, the shape of the hole is not limited to thequadrangle. In other embodiments, the holes 30 may have at least one ofvarious shapes such as a circular or triangular shape, for example.

As illustrated in FIGS. 3 and 4C, capacitor electrodes 201 of pixelsadjacent to each other may be connected to each other. In other words,the capacitor electrodes 201 of the pixels adjacent to each other in theX-axis direction may be integrally provided as a single unitary andindivisible unit provided unitarily.

As illustrated in FIG. 5 , the second insulating interlayer 160 isdisposed on the capacitor electrode 201, the initialization line IL, andthe first insulating interlayer 150. The second insulating interlayer160 may have a thickness greater than a thickness of the gate insulatinglayer 140. The second insulating interlayer 160 may include a materialsubstantially the same as a material included in the gate insulatinglayer 140 described above.

As illustrated in FIG. 5 , the first connection electrode 701, thesecond connection electrode 702, the high potential line VDL and thedata line DL are disposed on the second insulating interlayer 160. In anembodiment, the first connection electrode 701, the second connectionelectrode 702, the high potential line VDL and the data line DL aredisposed between the second insulating interlayer 160 and theplanarization layer 180, for example.

Although not illustrated in FIG. 5 , the third connection electrode 703(refer to FIGS. 3 and 4D) is also disposed on the second insulatinginterlayer 160. In an embodiment, the third connection electrode 703 isdisposed between the second insulating interlayer 160 and theplanarization layer 180, for example.

As illustrated in FIG. 5 , the first connection electrode 701 isconnected to the sixth drain electrode DE6 through a first contact hole11 which is defined through the second insulating interlayer 160, thefirst insulating interlayer 150 and the gate insulating layer 140.

As illustrated in FIG. 5 , the second connection electrode 702 isconnected to the first gate electrode GE1 through a second contact hole12 which is defined through the second insulating interlayer 160 and thefirst insulating interlayer 150. In addition, as illustrated in FIGS. 3,4A and 4D, the second connection electrode 702 is connected to the thirddrain electrode DE3 through a third contact hole 13. The third contacthole 13 is defined through the second insulating interlayer 160, thefirst insulating interlayer 150, and the gate insulating layer 140 toexpose the third drain electrode DE3.

As illustrated in FIGS. 3, 4A and 4D, the third connection electrode 703is connected to the fourth source electrode SE4 through a fourth contacthole 14. The fourth contact hole 14 is defined through the secondinsulating interlayer 160, the first insulating interlayer 150, and thegate insulating layer 140 to expose the fourth source electrode SE4. Inaddition, as illustrated in FIGS. 3, 4C and 4D, the third connectionelectrode 703 is connected to the initialization line IL through a fifthcontact hole 15. The fifth contact hole 15 is defined through the secondinsulating interlayer 160 to expose the initialization line IL.

As illustrated in FIG. 5 , the high potential line VDL is connected tothe capacitor electrode 201 through a sixth contact hole 16 which isdefined through the second insulating interlayer 160. In addition, asillustrated in FIGS. 3, 4A and 4D, the high potential line VDL isconnected to the fifth source electrode SE5 through a seventh contacthole 17. The seventh contact hole 17 is defined through the secondinsulating interlayer 160, the first insulating interlayer 150 and thegate insulating layer 140 to expose the fifth source electrode SE5.

As illustrated in FIGS. 3, 4A and 4D, the data line DL is connected tothe second source electrode SE2 through an eighth contact hole 18. Theeighth contact hole 18 is defined through the second insulatinginterlayer 160, the first insulating interlayer 150 and the gateinsulating layer 140 to expose the second source electrode SE2.

In an embodiment, the data line DL may include a refractory metal, suchas molybdenum, chromium, tantalum and titanium, or an alloy thereof, forexample. The data line DL may have a multilayer structure including arefractory metal layer and a low-resistance conductive layer. Examplesof the multilayer structure may include a double-layer structureincluding a chromium or molybdenum (alloy) lower layer and an aluminum(alloy) upper layer, or a triple-layer structure including a molybdenum(alloy) lower layer, an aluminum (alloy) intermediate layer and amolybdenum (alloy) upper layer. In an embodiment, the data line DL mayinclude any suitable metals or conductors other than the aforementionedmaterials.

The first connection electrode 701, the second connection electrode 702,the third connection electrode 703, and the high potential line VDL mayinclude a substantially same material and have a substantially samestructure (e.g., a multilayer structure) as those of the data line DL.Each of the first connection electrode 701, the second connectionelectrode 702, the third connection electrode 703, the high potentialline VDL, and the data line DL may be provided at the substantially sametime in a substantially same process.

As illustrated in FIG. 5 , the planarization layer 180 is disposed onthe first connection electrode 701, the second connection electrode 702,the third connection electrode 703, the high potential line VDL and thedata line DL.

The planarization layer 180 eliminates a height difference therebelow toincrease luminous efficiency of the LED to be disposed thereon. In anembodiment, the planarization layer 180 may include at least one of apolyacrylate resin, an epoxy resin, a phenolic resin, a polyamide resin,a polyimide resin, an unsaturated polyester resin, a polyphenylen etherresin, a polyphenylene sulfide resin and benzocyclobutene (“BCB”), forexample.

The LED may be an OLED. The LED includes a light emitting layer 512, ananode electrode PE (hereinafter, also referred to as “a pixelelectrode”) and a cathode electrode 613 (hereinafter, also referred toas “a common electrode”), as illustrated in FIG. 5 .

The light emitting layer 512 may include a low molecular weight organicmaterial or a high molecular weight organic material. Although notillustrated, at least one of a hole injection layer (“HIL”) and a holetransporting layer (“HTL”) may further be disposed between the pixelelectrode PE and the light emitting layer 512, and at least one of anelectron transporting layer (“ETL”) and an electron injection layer(“EIL”) may further be disposed between the light emitting layer 512 andthe common electrode 613.

As illustrated in FIG. 5 , the pixel electrode PE is disposed on theplanarization layer 180. A portion of or an entirety of the pixelelectrode PE is disposed in a light emission area 900. That is, thepixel electrode PE is disposed corresponding to the light emission area900 that is defined by the light blocking layer 190 to be describedbelow. The pixel electrode PE is connected to the first connectionelectrode 701 through a ninth contact hole 19 which is defined throughthe planarization layer 180.

As illustrated in FIGS. 3 and 4E, the pixel electrode PE may have arhombic shape, for example. In an alternative embodiment, the pixelelectrode PE may have one of various shapes, e.g., a quadrangular shape,other than the rhombic shape.

As illustrated in FIG. 5 , the light blocking layer 190 is disposed onthe pixel electrode PE and the planarization layer 180. An opening 900is defined through the light blocking layer 190, and the opening 900corresponds to the light emission area 900. As illustrated in FIGS. 3and 4G, the light emission area 900 may have a rhombic shape, forexample. In an alternative embodiment, the light emission area 900 mayhave one of various shapes, e.g., a quadrangular shape, rather than therhombic shape. The size of the light emission area 900 may be less thanthe size of the pixel electrode PE described above. At least a portionof the pixel electrode PE is disposed at the light emission area 900. Insuch an embodiment, the entirety of the light emission area 900 overlapsthe pixel electrode PE.

In an embodiment, the light blocking layer 190 may include a resin, suchas a polyacrylate resin and a polyimide resin.

The spacer 422 is disposed on the light blocking layer 190. The spacer422 may include or consist of a material substantially the same as amaterial included in the light blocking layer 190. The spacer 422substantially minimizes a height difference between a layer disposed inthe display area 100 a (refer to FIG. 1 ) of the substrate 100 and alayer disposed in the non-display area 100 b (refer to FIG. 1 ) of thesubstrate 100.

The light emitting layer 512 is disposed on the pixel electrode PE inthe light emission area 900, and the common electrode 613 is disposed onthe light blocking layer 190 and the light emitting layer 512.

The pixel electrode PE and the common electrode 613 may be provided asone of a transmissive electrode, a transflective electrode and areflective electrode.

In an embodiment, the transmissive electrode may include transparentconductive oxide (“TCO”). Such TCO may include at least one of indiumtin oxide (“ITO”), indium zinc oxide (“IZO”), antimony tin oxide(“ATO”), aluminum zinc oxide (“AZO”), zinc oxide (“ZnO”), and anycombinations thereof, for example.

In an embodiment, the transflective electrode and the reflectiveelectrode may include a metal, e.g., magnesium (Mg), silver (Ag), gold(Au), calcium (Ca), lithium (Li), chromium (Cr), aluminum (Al) andcopper (Cu), or an alloy thereof. In such an embodiment, whether anelectrode is a transflective type or a reflective type depends on thethickness of the electrode. Typically, the transflective electrode has athickness of about 200 nanometers (nm) or less, and the reflectiveelectrode has a thickness of about 300 nm or more, for example. As thethickness of the transflective electrode decreases, light transmittanceand resistance increase. As the thickness of the transflective electrodeincreases, light transmittance decreases.

In such an embodiment, the transflective electrode and the reflectiveelectrode may have a multilayer structure which includes a metal layerincluding a metal or a metal alloy and a TCO layer stacked on the metallayer.

The sealing portion 750 is disposed on the common electrode 613. Thesealing portion 750 may include a transparent insulating substrateincluding glass, transparent plastic, or the like. In addition, thesealing portion 750 may have a thin film encapsulation structure inwhich one or more inorganic layers and one or more organic layers arealternately laminated along the Z-axis direction. In an embodiment, thesealing portion 750 may include a lower inorganic layer 751, an organiclayer 755, and an upper inorganic layer 752, as illustrated in FIG. 5 ,for example. The organic layer 755 is disposed between the lowerinorganic layer 751 and the upper inorganic layer 752. Among the lowerinorganic layer 751, the organic layer 755 and the upper inorganic layer752, the organic layer 755 has the largest thickness. The lowerinorganic layer 751 and the upper inorganic layer 752 may have asubstantially equal thickness.

The lower inorganic layer 751 and the upper inorganic layer 752 mayinclude or consist of a material substantially the same as a materialincluded in the second layer 112 described above.

The organic layer 755 may include or consist of a material substantiallythe same as a material included in the first layer 111. In addition, theorganic layer 755 may include a monomer.

FIG. 6 is a cross-sectional view taken along line of FIG. 3 and FIG. 7is a view enlarging a portion A of FIG. 6 . However, the sealing portion750 and the common electrode 613 are omitted in FIG. 7 .

A portion of the sealing portion 750 is inserted into the substrate 100,as illustrated in FIG. 6 . In an embodiment, the sealing portion 750includes a cover portion 750 a and an extension portion 750 b extendingfrom the cover portion 750 a toward the substrate 100, for example. Theextension portion 750 b is inserted into the substrate 100.

To this end, a hole or a recess is defined in the substrate 100, thepixel circuit unit 200, and the light blocking layer 190 at portionscorresponding to the extension portion 750 b of the sealing portion 750.In an embodiment, as illustrated in FIGS. 6 and 7 , a first hole 21 anda recess 20 corresponding to the extension portion 750 b are defined inthe substrate 100, a second hole 22 corresponding to the extensionportion 750 b is defined in the pixel circuit unit 200, and a third hole23 corresponding to the extension portion 750 b is defined in the lightblocking layer 190, for example.

The recess 20 of the substrate 100 may be defined, for example, in thethird layer 113 of the substrate 100. The recess 20 is defined in alayer below a switching element (e.g., at least one of the switchingelements T1, T2, T3, T4, T5, T6 and T7) of the pixel circuit unit 200.In an embodiment, the recess 20 is defined closer to the base layer 110than the switching element is thereto, for example. In a furtherembodiment, the distance between the recess 20 and the base layer 110measured in the Z-axis direction is less than the distance between thesemiconductor layer 321 of the switching element and the base layer 110measured in the Z-axis direction, for example.

The first hole 21 of the substrate 100 may be defined in the fourthlayer 114 of the substrate 100, for example.

The first hole 21, the second hole 22, the third hole 23 and the recess20 are defined corresponding to each other. In addition, adjacent onesof the first hole 21, the second hole 22, the third hole 23 and therecess 20 are unitary with each other.

The first hole 21 may be defined between the recess 20 and the secondhole 22.

The recess 20 has a width (or diameter) which gradually increases alonga direction (e.g., the Z-axis direction) from the third layer 113 towardthe fourth layer 114. As illustrated in FIG. 7 , a width 20 d (ordiameter) of the recess 20 is a value measured in the X-axis direction(or Y-axis direction). As used herein, the width 20 d (or diameter) ofthe recess 20 means a maximum width (or maximum diameter) or an averagewidth (or average diameter) of the recess 20.

At least one of mutually facing inner walls W1 and W2 of the recess 20is inclined at a predetermined angle with respect to interfaces S1 andS2 between the third layer 113 and the fourth layer 114. In anembodiment, angles θ1 and 02 defined between at least one of themutually facing inner walls W1 and W2 of the recess 20 and theinterfaces S1 and S2 are an obtuse angle, for example. In a furtherembodiment, the angle θ1 defined between the inner wall W1 and theinterface S1 adjacent to the inner wall W1 is an obtuse angle, forexample.

The first hole 21 has a width (or diameter) which gradually increasesalong the Z-axis direction. A width 21 d (or diameter) of the first hole21 is a value measured in the X-axis direction (or Y-axis direction). Insuch an embodiment, the width 21 d (or diameter) of the first hole 21means a maximum width (or maximum diameter) or an average width (oraverage diameter) of the first hole 21.

The second hole 22 has a width (or diameter) which gradually increasesalong the Z-axis direction. A width 22 d (or diameter) of the secondhole 22 is a value measured in the X-axis direction (or Y-axisdirection). In such an embodiment, the width 22 d (or diameter) of thesecond hole 22 means a maximum width (or maximum diameter) or an averagewidth (or average diameter) of the second hole 22.

The second hole 22 refers to a hole that continuously passes throughinsulating layers included in the pixel circuit unit 200. In anembodiment, the second hole 22 means a hole that continuously passesthrough the buffer layer 120, the gate insulating layer 140, the firstinsulating interlayer 150, the second insulating interlayer 160, and theplanarization layer 180, for example. In an embodiment, the second hole22 may include a hole 22-1 (hereinafter, also referred to as “a bufferhole”) which is defined through the buffer layer 120, a hole 22-2(hereinafter, also referred to as “a gate hole”) which is definedthrough the gate insulating layer 140, a hole 22-3 (hereinafter, alsoreferred to as “a first interlayer hole”) which is defined through thefirst insulating interlayer 150, a hole 22-4 (hereinafter, also referredto as “a second interlayer hole”) which is defined through the secondinsulating interlayer 160, and a hole 22-5 (hereinafter, also referredto as “a planarization hole”) which is defined through the planarizationlayer 180, for example.

The buffer hole 22-1, the gate hole 22-2, the first interlayer hole22-3, the second interlayer hole 22-4, and the planarization hole 22-5may have widths (or diameters) different from each other. In anembodiment, the holes 22-1, 22-2, 22-3, 22-4, and 22-5 included in thesecond hole 22 may have widths (or diameters) which increase as furtheraway from the substrate 100 in the Z-axis direction, for example. In afurther embodiment, between the buffer hole 22-1, the gate hole 22-2,the first interlayer hole 22-3, the second interlayer hole 22-4, and theplanarization hole 22-5, the planarization hole 22-5 may have thelargest width (or largest diameter). The width (or diameter) of eachhole included in the second hole 22 is a value measured in the X-axisdirection (or Y-axis direction). In such an embodiment, the width (ordiameter) of each of the holes 22-1, 22-2, 22-3, 22-4, and 22-5 includedin the second hole 22 corresponds to a maximum width (or maximumdiameter) or an average width (or maximum diameter).

Each of the holes 22-1, 22-2, 22-3, 22-4, and 22-5 included in thesecond hole 22 may have a width (or diameter) which gradually increasesalong the Z-axis direction. In an embodiment, the buffer hole 22-1 has awidth (or diameter) which gradually increases along the Z-axisdirection, the gate hole 22-2 has a width (or diameter) which graduallyincreases along the Z-axis direction, the first interlayer hole 22-3 hasa width (or diameter) which gradually increases along the Z-axisdirection, the second interlayer hole 22-4 has a width (or diameter)which gradually increases along the Z-axis direction, and theplanarization hole 22-5 has a width (or diameter) which graduallyincreases along the Z-axis direction, for example.

The third hole 23 may have a width (or diameter) which graduallyincreases along the Z-axis direction. The width 23 d (or diameter) ofthe third hole 23 is a value measured in the X-axis direction (or Y-axisdirection). In such an embodiment, the width 23 d (or diameter) of thethird hole 23 means a maximum width or an average width of the thirdhole 23.

The width 20 d (or diameter) of the recess 20 is greater than the width21 d (or diameter) of the first hole 21. As illustrated in FIG. 7 , across-section of the recess 20 and the first hole 21 may have the shapeof an anchor, for example. In such an embodiment, the cross-section ofthe recess 20 and the extension portion 750 b inserted into the firsthole 21 may also have the shape of an anchor, for example.

From a planar point of view of FIG. 7 , the first hole 21 is surroundedby the recess 20. In addition, from a planar point of view of FIG. 7 ,the first hole 21 and the recess 20 overlap each other.

From a planar point of view of FIG. 7 , the first hole 21, the secondhole 22, and the recess 20 are surrounded by the third hole 23.

The width 22 d (or diameter) of the second hole 22 is greater than thewidth 21 d (or diameter) of the first hole 21.

The width 23 d (or diameter) of the third hole 23 is greater than thewidth 22 d (or diameter) of the second hole 22.

The extension portion 750 b of the sealing portion 750 described aboveis inserted (or buried) in the recess 20, the first hole 21, the secondhole 22, and the third hole 23 having such a structure. In anembodiment, the extension portion 750 b sequentially passes through thethird hole 23, the second hole 22 and the first hole 21 to be insertedinto the recess 20, for example. In such an embodiment, since the width20 d (or diameter) of the recess 20 is greater than the width 21 d (ordiameter) of the first hole 21, the extension portion 750 b insertedinto the recess 20, the first hole 21, the second hole 22, and the thirdhole 23 is not easily separated in the Z-axis direction. Accordingly, acoupling force between the sealing portion 750 and the substrate 100 anda coupling force between the sealing portion 750 and a structuretherebelow may be improved.

In an embodiment, an edge of the sealing portion 750 is disposed at anedge of the substrate 100, and the sealing portion 750 includes thelower inorganic layer 751 and the upper inorganic layer 752 whichcontact each other at the edge of the substrate 100. That is, thesealing portion 750 disposed at the edge of the substrate 100 does notinclude an organic layer. In addition, the planarization layer 180 isnot disposed at the edge of the substrate 100. The edge of the sealingportion 750 contacts the edge of the substrate 100 in order to improvethe coupling force between the sealing portion 750 and the substrate100. In an embodiment, the lower inorganic layer 751 and the upperinorganic layer 752 of the sealing portion 750 may contact the secondinsulating interlayer 160 disposed at the edge of the substrate 100, forexample. In an embodiment, when the edge of the sealing portion 750increases, the coupling force between the sealing portion 750 and thesubstrate 100 is improved, while a dead space of the display device 5555is increased. In an embodiment of the invention, as the coupling forcebetween the sealing portion 750 and the substrate 100 may be improvedthrough the extension portion 750 b of the sealing portion 750, a lengthof the edge of the sealing portion 750 may be reduced. Accordingly, thedead space of the display device 5555 may be substantially minimized.

The recess 20, the first hole 21, the second hole 22, and the third hole23 described above may be disposed in the display area 100 a (refer toFIG. 1 ) of the substrate 100. In an embodiment, when an entire holeincluding the recess 20, the first hole 21, the second hole 22, and thethird hole 23 is defined as one coupling recess 220, the coupling recess220 and the extension portion 750 b may be defined and disposed in thedisplay area 100 a of the substrate 100, for example.

The coupling recess 220 and the extension portion 750 b of the displayarea 100 a may be defined and disposed between the high potential lineVDL and the data line DL which are adjacent to each other, asillustrated in FIG. 3 .

FIG. 8 is a detailed plan view illustrating a display device including aplurality of pixels illustrated in FIG. 1 and lines connected thereto.

A plurality of pixels is illustrated in FIG. 8 , and four pixelsconnected in common to the m-th emission control line ELm are referredto as a first pixel PX1, a second pixel PX2, a third pixel PX3, and afourth pixel PX4, respectively. In such an embodiment, four pixelsconnected in common to an (m+1)-th emission control line ELm+1 arereferred to as a fifth pixel PX5, a sixth pixel PX6, a seventh pixelPX7, and an eighth pixel PX8, respectively.

The second pixel PX2 of FIG. 8 is substantially the same as the pixel PXof FIG. 3 described above. The first pixel PX1, the third pixel PX3, thefourth pixel PX4, the fifth pixel PX5, the sixth pixel PX6, the seventhpixel PX7, and the eighth pixel PX8 may have a substantially sameconfiguration as that of the pixel PX of FIG. 3 .

The first pixel PX1, the third pixel PX3, the fifth pixel PX5, and theseventh pixel PX7 may emit lights having a substantially same color aseach other. In an embodiment, for example, each of the first pixel PX1,the third pixel PX3, the fifth pixel PX5, and the seventh pixel PX7 maybe a green pixel which emits a green light, for example.

The second pixel PX2 and the eighth pixel PX8 may emit lights having asubstantially same color as each other. In an embodiment, for example,each of the second pixel PX2 and the eighth pixel PX8 may be a red pixelwhich emits a red light, for example.

The fourth pixel PX4 and the sixth pixel PX6 may emit lights having asubstantially same color as each other. In an embodiment, for example,each of the fourth pixel PX4 and the sixth pixel PX6 may be a blue pixelwhich emits a blue light, for example.

Four adjacent pixels may define one unit pixel. In an embodiment, forexample, the first pixel PX1, the second pixel PX2, the third pixel PX3,and the sixth pixel PX6 which are arranged adjacent to each othercollectively define a unit pixel (hereinafter, also referred to as “afirst unit pixel”). In such an embodiment, the third pixel PX3, thefourth pixel PX4, the eighth pixel PX8 and another green pixel notillustrated, which are arranged adjacent to each other, collectivelydefine another unit pixel (hereinafter, also referred to as “a secondunit pixel”). In such an embodiment, the another green pixel which isnot illustrated is connected to the m-th emission control line ELm andis disposed adjacent to the fourth pixel PX4 and the eighth pixel PX8.The first unit pixel and the second unit pixel which are adjacent toeach other in such a manner share a green pixel (e.g., the third pixelPX3) disposed therebetween. In such an embodiment, the second pixel PX2of the first unit pixel defines another unit pixel together with anotherthree pixels adjacent to an upper side thereof, and the sixth pixel PX6of the first unit pixel defines still another unit pixel together withstill another three pixels adjacent to a lower side thereof. In such anembodiment, the display device includes pixels of a pentile structure.

In an embodiment, each of the pixels PX1 to PX8 includes a pixelelectrode. In an embodiment, for example, the first pixel PX1 includes afirst pixel electrode PE1, the second pixel PX2 includes a second pixelelectrode PE2, the third pixel PX3 includes a third pixel electrode PE3,the fourth pixel PX4 includes a fourth pixel electrode PE4, the fifthpixel PX5 includes a fifth pixel electrode PE5, the sixth pixel PX6includes a sixth pixel electrode PE6, the seventh pixel PX7 includes aseventh pixel electrode PE7, and the eighth pixel PX8 includes an eighthpixel electrode PE8.

The pixel electrodes that are included in pixels that emit lights havinga substantially same color may have a substantially equal size (e.g.,area) as each other. In an embodiment, for example, the first pixelelectrode PE1, the third pixel electrode PE3, the fifth pixel electrodePE5, and the seventh pixel electrode PE7 of the green pixels may have asubstantially equal size as each other. In such an embodiment, thesecond pixel electrode PE2 and the eighth pixel electrode PE8 of the redpixels may have a substantially equal size as each other. In such anembodiment, the fourth pixel electrode PE4 and the sixth pixel electrodePE6 of the blue pixels may have a substantially equal size as eachother.

Between the pixel electrodes, the pixel electrode of the green pixel mayhave the smallest size. In an embodiment, for example, among the first,second, third, fourth, fifth, sixth, and seventh pixel electrodes PE1,PE2, PE3, PE4, PE5, PE6, and PE7, the first pixel electrode PE1, thethird pixel electrode PE3, the fifth pixel electrode PE5, and theseventh pixel electrode PE7 may have the smallest size.

In such an embodiment, the pixel electrode of the blue pixel may have asize greater than a size of the pixel electrode of the red pixel. In anembodiment, for example, the fourth pixel electrode PE4 may have a sizegreater than a size of the second pixel electrode PE2. In such anembodiment, the fourth pixel electrode PE4 may have a size greater thana size of the eighth pixel electrode PE8. In such an embodiment, thesixth pixel electrode PE6 may have a size greater than a size of thesecond pixel electrode PE2. In such an embodiment, the sixth pixelelectrode PE6 may have a size greater than a size of the eighth pixelelectrode PE8.

In an embodiment, although not illustrated, each of the pixels PX1, PX2,PX3, PX4, PX5, PX6, PX7, and PX8 further includes the first, second,third, fourth, fifth, sixth and seventh switching elements T1, T2, T3,T4, T5, T6 and T7 and the storage capacitor Cst. Detailed descriptionsof the first, second, third, fourth, fifth, sixth and seventh switchingelements T1, T2, T3, T4, T5, T6 and T7 and the storage capacitor Cstwill refer to FIG. 3 and the related descriptions.

In an embodiment, as illustrated in FIG. 8 , the first pixel PX1, thesecond pixel PX2, the third pixel PX3, and the fourth pixel PX4 areconnected to a same scan line and a same emission control line. In anembodiment, for example, the first pixel PX1, the second pixel PX2, thethird pixel PX3, and the fourth pixel PX4 are connected in common to the(n−1)-th scan line SLn−1, the n-th scan line SLn, the (n+1)-th scan lineSLn+1, and the m-th emission control line ELm.

In such an embodiment, the fifth pixel PX5, the sixth pixel PX6, theseventh pixel PX7, and the eighth pixel PX8 are connected to a same scanline and a same emission control line. In an embodiment, for example,the fifth pixel PX5, the sixth pixel PX6, the seventh pixel PX7, and theeighth pixel PX8 are connected in common to the (n+1)-th scan lineSLn+1, the (n+2)-th scan line SLn+2, an (n+3)-th scan line SLn+3, andthe (m+1)-th emission control line ELm+1.

The first pixel PX1 and the fifth pixel PX5 are connected in common to asame data line. In an embodiment, for example, the first pixel PX1 andthe fifth pixel PX5 are connected in common to an (r−1)-th data lineDLr−1 where r is a natural number greater than two. In an embodiment,the (r−1)-th data line DLr−1 may be disposed adjacent to an (r−2)-thdata line DLr−2 disposed on the leftmost side in FIG. 8 .

The second pixel PX2 and the sixth pixel PX6 are connected in common toa same data line. In an embodiment, for example, the second pixel PX2and the sixth pixel PX6 are connected in common to an r-th data lineDLr.

The third pixel PX3 and the seventh pixel PX7 are connected in common toa same data line. In an embodiment, for example, the third pixel PX3 andthe seventh pixel PX7 are connected in common to an (r+1)-th data lineDLr+1.

The fourth pixel PX4 and the eighth pixel PX8 are connected in common toa same data line. In an embodiment, for example, the fourth pixel PX4and the eighth pixel PX8 are connected in common to an (r+2)-th dataline DLr+2.

Hereinafter, the first, second, third and fourth pixels PX1, PX2, PX3and PX4 connected in common to the (n−1)-th scan line SLn−1, the n-thscan line SLn, the (n+1)-th scan line SLn+1, and the m-th emissioncontrol line ELm are defined as a first pixel group, and the fifth,sixth, seventh and eighth pixels PX5, PX6, PX7, and PX8 connected incommon to the (n+1)-th scan line SLn+1, the (n+2)-th scan line SLn+2,the (n+3)-th scan line SLn+3, and the (m+1)-th emission control lineElm+1 are defined as a second pixel group.

In an embodiment, the first pixel group and the second pixel group areconnected to different emission control lines. In such an embodiment,the different emission control lines are disposed adjacent to eachother. In an embodiment, for example, the first pixel group is connectedto the m-th emission control line ELm, and the second pixel group isconnected to the (m+1)-th emission control line ELm+1.

As illustrated in FIG. 8 , the coupling recess 220 described above maybe disposed evenly in the display area 100 a (refer to FIG. 1 ) of thesubstrate 100.

The coupling recess 220 of the display area 100 a, as illustrated inFIG. 8 , may be disposed between the high potential line VDL and the(r−1)-th data line DLr−1 which are adjacent to each other, the highpotential line VDL and the r-th data line DLr which are adjacent to eachother, and between the high potential line VDL and the (r+1)-th dataline DLr+1 which are adjacent to each other, and between the highpotential line VDL and the (r+2)-th data line DLr+2 which are adjacentto each other.

Similarly, the extension portion 750 b (refer to FIG. 6 ) describedabove may be disposed evenly in the display area 100 a of the substrate100.

The extension portion 750 b of the display area 100 a may be disposedbetween the high potential line VDL and the (r−1)-th data line DLr−1which are adjacent to each other, the high potential line VDL and ther-th data line DLr which are adjacent to each other, and between thehigh potential line VDL and the (r+1)-th data line DLr+1 which areadjacent to each other, and between the high potential line VDL and the(r+2)-th data line DLr+2 which are adjacent to each other.

FIG. 9 is a cross-sectional view taken along line I-I′ of anotherembodiment of FIG. 3 , and FIG. 10 is a cross-sectional view taken alongline II-II′ of another embodiment of FIG. 3 .

As illustrated in FIGS. 9 and 10 , the sealing portion 750 may furtherinclude a composite inorganic layer.

The composite inorganic layer is disposed on the common electrode 613 tooverlap an entire surface of the substrate. In a further embodiment, thecomposite inorganic layer may be disposed between the common electrode613 and a first inorganic layer 1-01 (refer to FIG. 11 ).

The composite inorganic layer may include the first inorganic layer 1-01and a second inorganic layer 1-02 (refer to FIG. 11 ), and a refractiveindex of the first inorganic layer 1-01 and a refractive index of thesecond inorganic layer 1-02 may be different from each other.

Hereinafter, the composite inorganic layer in an embodiment of theinvention will be described in detail with reference to FIGS. 11 to 25 .

FIG. 11 is a view enlarging a portion A of FIG. 9 .

The sealing portion 750 may include the lower inorganic layer 751, theorganic layer 755, the upper inorganic layer 752 and a compositeinorganic layer 1000, as illustrated in FIG. 11 .

The composite inorganic layer 1000 may include the first inorganic layer1-01 and the second inorganic layer 1-02 disposed on the first inorganiclayer 1-01. The first and second inorganic layers 1-01 and 1-02 arearranged along the Z-axis direction.

The first inorganic layer 1-01 may be disposed between the commonelectrode 613 and the second inorganic layer 1-02, and the secondinorganic layer 1-02 may be disposed between the first inorganic layer1-01 and the lower inorganic layer 751.

The first inorganic layer 1-01 and the second inorganic layer 1-02 maycontact each other.

The first inorganic layer 1-01 has a refractive index different from arefractive index of the second inorganic layer 1-02. In an embodiment,the refractive index of the first inorganic layer 1-01 may be higherthan that of the second inorganic layer 1-02, for example. The firstinorganic layer 1-01 may include a material having a relatively highrefractive index, and the second inorganic layer 1-02 may include amaterial having a relatively low refractive index.

In an embodiment, for example, the first inorganic layer 1-01 and thesecond inorganic layer 1-02 may include any one of inorganic materialssuch as TiO₂, SiN_(x), AlO_(x), and SiO_(x). In a further embodiment,the first inorganic layer 1-01 may include TiO₂, and the secondinorganic layer 1-02 may include any one of SiN_(x), AlO_(x), andSiO_(x) that have a refractive index lower than that of TiO₂, forexample.

As another example, the first inorganic layer 1-01 may include SiN_(x),and the second inorganic layer 1-02 may include SiO_(x). In anembodiment, the refractive index of SiN_(x) may be about 1.833, and therefractive index of SiO_(x) may be about 1.487, for example. In anembodiment, the refractive index (1.833) of SiN_(x) and the refractiveindex (1.487) of SiO_(x) may be the refractive index at a wavelength ofabout 632 nm, for example.

As another example, the first inorganic layer 1-01 may include TiO₂, andthe first inorganic layer 1-01 may include Al₂O₃. In an embodiment, therefractive index of TiO₂ may be about 2.288, and the refractive index ofAl₂O₃ may be about 1.627, for example. In an embodiment, the refractiveindex (2.288) of TiO₂ and the refractive index (1.627) of Al₂O₃ may bethe refractive index at a wavelength of about 632 nm, for example.

A difference between the refractive index of the first inorganic layer1-01 and the refractive index of the second inorganic layer 1-02 may beabout 0.4 or more. In an embodiment, the first inorganic layer 1-01 mayinclude TiO₂, and the second inorganic layer 1-02 may include SiO_(x),for example. Since TiO₂ has a refractive index of about 2.288 andSiO_(x) has a refractive index in a range from about 1.833 to about1.882, the first inorganic layer 1-01 and the second inorganic layer1-02 which include these materials may have a refractive indexdifference in a range from about 0.406 to about 0.455, for example.

In an embodiment, the refractive index of the second inorganic layer1-02 may be higher than the refractive index of the first inorganiclayer 1-01. In such an embodiment, the second inorganic layer 1-02 mayinclude TiO₂, and the first inorganic layer 1-01 may include any one ofSiN_(x), AlO_(x), and SiO_(x) which have a refractive index lower thanthat of TiO₂.

In an embodiment, the refractive index of the second inorganic layer1-02 may be higher than the refractive index of the first inorganiclayer 1-01. In such an embodiment, the second inorganic layer 1-02 mayinclude TiO₂, and the first inorganic layer 1-01 may include any one ofSiN_(x), AlO_(x), and SiO_(x) which have a refractive index lower thanthat of TiO₂.

FIG. 12 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, and a plurality ofcomposite inorganic layers 1000, as illustrated in FIG. 12 . In anembodiment, the composite inorganic layers 1000 may include a firstcomposite inorganic layer 1001, a second composite inorganic layer 1002,a third composite inorganic layer 1003, and a fourth composite inorganiclayer 1004, for example.

The first composite inorganic layer 1001 may be disposed on a commonelectrode 613. In an embodiment, the first composite inorganic layer1001 may be disposed between the common electrode 613 and the secondcomposite inorganic layer 1002, for example.

The second composite inorganic layer 1002 may be disposed on the firstcomposite inorganic layer 1001. In an embodiment, the second compositeinorganic layer 1002 may be disposed between the first compositeinorganic layer 1001 and the third composite inorganic layer 1003, forexample.

The third composite inorganic layer 1003 may be disposed on the secondcomposite inorganic layer 1002. In an embodiment, the third compositeinorganic layer 1003 may be disposed between the second compositeinorganic layer 1002 and the fourth composite inorganic layer 1004, forexample.

The fourth composite inorganic layer 1004 may be disposed on the thirdcomposite inorganic layer 1003. In an embodiment, the fourth compositeinorganic layer 1004 may be disposed between the third compositeinorganic layer 1003 and the lower inorganic layer 751, for example.

The first composite inorganic layer 1001 may include a first inorganiclayer 1-01 and a second inorganic layer 1-02 disposed on the firstinorganic layer 1-01. In an embodiment, the first inorganic layer 1-01may be disposed on the common electrode 613 and the second inorganiclayer 1-02, and the second inorganic layer 1-02 may be disposed betweenthe first inorganic layer 1-01 and the second composite inorganic layer1002, for example. The first inorganic layer 1-01 and the secondinorganic layer 1-02 may contact each other.

The second composite inorganic layer 1002 may include a third inorganiclayer 2-03 and a fourth inorganic layer 2-04 disposed on the thirdinorganic layer 2-03. In an embodiment, the third inorganic layer 2-03may be disposed between the second inorganic layer 1-02 and the fourthinorganic layer 2-04, and the fourth inorganic layer 2-04 may bedisposed between the third inorganic layer 2-03 and the third compositeinorganic layer 1003, for example. The third inorganic layer 2-03 andthe fourth inorganic layer 2-04 may contact each other.

The third composite inorganic layer 1003 may include a fifth inorganiclayer 3-05 and a sixth inorganic layer 3-06 disposed on the fifthinorganic layer 3-05. In an embodiment, the fifth inorganic layer 3-05may be disposed between the fourth inorganic layer 2-04 and the sixthinorganic layer 3-06, and the sixth inorganic layer 3-06 may be disposedbetween the fifth inorganic layer 3-05 and the fourth compositeinorganic layer 1004, for example. The fifth inorganic layer 3-05 andthe sixth inorganic layer 3-06 may contact each other.

The fourth composite inorganic layer 1004 may include a seventhinorganic layer 4-07 and an eighth inorganic layer 4-08 disposed on theseventh inorganic layer 4-07. In an embodiment, the seventh inorganiclayer 4-07 may be disposed between the sixth inorganic layer 3-06 andthe eighth inorganic layer 4-08, and the eighth inorganic layer 4-08 maybe disposed between the seventh inorganic layer 4-07 and the lowerinorganic layer 751, for example. The seventh inorganic layer 4-07 andthe eighth inorganic layer 4-08 may contact each other.

The first inorganic layer 1-01 has a refractive index different from arefractive index of the second inorganic layer 1-02. In an embodiment,the refractive index of the first inorganic layer 1-01 may be higherthan the refractive index of the second inorganic layer 1-02, forexample. The first inorganic layer 1-01 may include a material having arelatively high refractive index, and the second inorganic layer 1-02may include a material having a relatively low refractive index.

In an embodiment, for example, the first inorganic layer 1-01 and thesecond inorganic layer 1-02 may include one of inorganic materials suchas TiO₂, SiN_(x), AlO_(x), and SiO_(x). In a further embodiment, thefirst inorganic layer 1-01 may include TiO₂, and the second inorganiclayer 1-02 may include any one of SiN_(x), AlO_(x), and SiO_(x) whichhave a refractive index lower than that of TiO₂, for example.

A difference between the refractive index of the first inorganic layer1-01 and the refractive index of the second inorganic layer 1-02 may beabout 0.4 or more. In an embodiment, the first inorganic layer 1-01 mayinclude TiO₂, and the second inorganic layer 1-02 may include SiO_(x),for example. Since TiO₂ has a refractive index of about 2.288 andSiO_(x) has a refractive index in a range from about 1.833 to about1.882, the first inorganic layer 1-01 and the second inorganic layer1-02 which include these materials may have a refractive indexdifference in a range from about 0.406 to about 0.455, for example.

In an embodiment, the refractive index of the second inorganic layer1-02 may be higher than the refractive index of the first inorganiclayer 1-01. In such an embodiment, the second inorganic layer 1-02 mayinclude TiO₂, and the first inorganic layer 1-01 may include any one ofSiN_(x), AlO_(x), and SiO_(x) which have a refractive index lower thanthat of TiO₂.

The third inorganic layer 2-03 has a refractive index different from arefractive index of the fourth inorganic layer 2-04. In an embodiment,the refractive index of the third inorganic layer 2-03 may be higherthan the refractive index of the fourth inorganic layer 2-04, forexample. The third inorganic layer 2-03 may include a material having arelatively high refractive index, and the fourth inorganic layer 2-04may include a material having a relatively low refractive index. In anembodiment, the refractive index of the fourth inorganic layer 2-04 maybe higher than the refractive index of the third inorganic layer 2-03.

The third inorganic layer 2-03 may include a material substantially thesame as a material included in the first inorganic layer 1-01 describedabove, and the fourth inorganic layer 2-04 may include a materialsubstantially the same as a material included in the second inorganiclayer 1-02.

The fifth inorganic layer 3-05 has a refractive index different from arefractive index of the sixth inorganic layer 3-06. In an embodiment,the refractive index of the fifth inorganic layer 3-05 may be higherthan the refractive index of the sixth inorganic layer 3-06, forexample. The fifth inorganic layer 3-05 may include a material having arelatively high refractive index, and the sixth inorganic layer 3-06 mayinclude a material having a relatively low refractive index. In anembodiment, the refractive index of the sixth inorganic layer 3-06 maybe higher than the refractive index of the fifth inorganic layer 3-05.

The fifth inorganic layer 3-05 may include a material substantially thesame as a material included in the first inorganic layer 1-01 describedabove, and the sixth inorganic layer 3-06 may include a materialsubstantially the same as a material included in the second inorganiclayer 1-02 described above.

The seventh inorganic layer 4-07 has a refractive index different from arefractive index of the eighth inorganic layer 4-08. In an embodiment,the refractive index of the seventh inorganic layer 4-07 may be higherthan the refractive index of the eighth inorganic layer 4-08, forexample. The seventh inorganic layer 4-07 may include a material havinga relatively high refractive index, and the eighth inorganic layer 4-08may include a material having a relatively low refractive index. In anembodiment, for example, the refractive index of the eighth inorganiclayer 4-08 may be higher than the refractive index of the seventhinorganic layer 4-07.

The seventh inorganic layer 4-07 may include a material substantiallythe same as a material included in the first inorganic layer 1-01described above, and the eighth inorganic layer 4-08 may include amaterial substantially the same as a material included in the secondinorganic layer 1-02 described above.

FIG. 13 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, and a plurality ofcomposite inorganic layers 1000, as illustrated in FIG. 13 . In anembodiment, the composite inorganic layers 1000 may include a firstcomposite inorganic layer 1001, a second composite inorganic layer 1002,a third composite inorganic layer 1003, a fourth composite inorganiclayer 1004, and a fifth composite inorganic layer 1005, for example.

The first composite inorganic layer 1001, the second composite inorganiclayer 1002, the third composite inorganic layer 1003, and the fourthcomposite inorganic layer 1004 illustrated in FIG. 13 are substantiallythe same as the first composite inorganic layer 1001, the secondcomposite inorganic layer 1002, the third composite inorganic layer1003, and the fourth composite inorganic layer 1004 illustrated in FIG.12 , respectively. However, the fourth composite inorganic layer 1004 ofFIG. 13 is disposed between the third composite inorganic layer 1003 andthe fifth composite inorganic layer 1005.

The fifth composite inorganic layer 1005 may be disposed on the fourthcomposite inorganic layer 1004. In an embodiment, the fifth compositeinorganic layer 1005 may be disposed between the fourth compositeinorganic layer 1004 and the lower inorganic layer 751, for example.

The fifth composite inorganic layer 1005 may include a ninth inorganiclayer 5-09 and a tenth inorganic layer 5-10 disposed on the ninthinorganic layer 5-09. In an embodiment, the ninth inorganic layer 5-09may be disposed between the eighth inorganic layer 4-08 and the tenthinorganic layer 5-10, and the tenth inorganic layer 5-10 may be disposedbetween the ninth inorganic layer 5-09 and the lower inorganic layer751, for example. The ninth inorganic layer 5-09 and the tenth inorganiclayer 5-10 may contact each other.

The ninth inorganic layer 5-09 has a refractive index different from arefractive index of the tenth inorganic layer 5-10. In an embodiment,the refractive index of the ninth inorganic layer 5-09 may be higherthan the refractive index of the tenth inorganic layer 5-10, forexample. The ninth inorganic layer 5-09 may include a material having arelatively high refractive index, and the tenth inorganic layer 5-10 mayinclude a material having a relatively low refractive index. In anembodiment, the refractive index of the tenth inorganic layer 5-10 maybe higher than the refractive index of the ninth inorganic layer 5-09.

The ninth inorganic layer 5-09 may include a material substantially thesame as a material included in the first inorganic layer 1-01 describedabove, and the tenth inorganic layer 5-10 may include a materialsubstantially the same as a material included in the second inorganiclayer 1-02 described above.

FIG. 14 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, and a plurality ofcomposite inorganic layers 1000, as illustrated in FIG. 14 . In anembodiment, the composite inorganic layers 1000 may include a firstcomposite inorganic layer 1001, a second composite inorganic layer 1002,a third composite inorganic layer 1003, a fourth composite inorganiclayer 1004, a fifth composite inorganic layer 1005, a sixth compositeinorganic layer 1006, a seventh composite inorganic layer 1007, and aneighth composite inorganic layer 1008, for example.

The first composite inorganic layer 1001, the second composite inorganiclayer 1002, the third composite inorganic layer 1003, and the fourthcomposite inorganic layer 1004 illustrated in FIG. 14 are substantiallythe same as the first composite inorganic layer 1001, the secondcomposite inorganic layer 1002, the third composite inorganic layer1003, and the fourth composite inorganic layer 1004 illustrated in FIG.12 , respectively. However, the fourth composite inorganic layer 1004 ofFIG. 14 is disposed between the third composite inorganic layer 1003 andthe fifth composite inorganic layer 1005.

The fifth composite inorganic layer 1005 of FIG. 14 is substantially thesame as the fifth composite inorganic layer 1005 of FIG. 13 describedabove. However, the fifth composite inorganic layer 1005 of FIG. 14 isdisposed between the fourth composite inorganic layer 1004 and the sixthcomposite inorganic layer 1006.

The sixth composite inorganic layer 1006 may be disposed on the fifthcomposite inorganic layer 1005. In an embodiment, the sixth compositeinorganic layer 1006 may be disposed between the fifth compositeinorganic layer 1005 and the seventh composite inorganic layer 1007, forexample.

The seventh composite inorganic layer 1007 may be disposed on the sixthcomposite inorganic layer 1006. In an embodiment, the seventh compositeinorganic layer 1007 may be disposed between the sixth compositeinorganic layer 1006 and the eighth composite inorganic layer 1008, forexample.

The eighth composite inorganic layer 1008 may be disposed on the seventhcomposite inorganic layer 1007. In an embodiment, the eighth compositeinorganic layer 1008 may be disposed between the seventh compositeinorganic layer 1007 and the lower inorganic layer 751, for example.

The sixth composite inorganic layer 1006 may include an eleventhinorganic layer 6-11 and a twelfth inorganic layer 6-12 disposed on theeleventh inorganic layer 6-11. In an embodiment, the eleventh inorganiclayer 6-11 may be disposed between the tenth inorganic layer 5-10 andthe twelfth inorganic layer 6-12, and the twelfth inorganic layer 6-12may be disposed between the eleventh inorganic layer 6-11 and theseventh composite inorganic layer 1007, for example. The eleventhinorganic layer 6-11 and the twelfth inorganic layer 6-12 may contacteach other.

The seventh composite inorganic layer 1007 may include a thirteenthinorganic layer 7-13 and a fourteenth inorganic layer 7-14 disposed onthe thirteenth inorganic layer 7-13. In an embodiment, the thirteenthinorganic layer 7-13 may be disposed between the twelfth inorganic layer6-12 and the fourteenth inorganic layer 7-14, and the fourteenthinorganic layer 7-14 may be disposed between the thirteenth inorganiclayer 7-13 and the eighth composite inorganic layer 1008, for example.The thirteenth inorganic layer 7-13 and the fourteenth inorganic layer7-14 may contact each other.

The eighth composite inorganic layer 1008 may include a fifteenthinorganic layer 8-15 and a sixteenth inorganic layer 8-16 disposed onthe fifteenth inorganic layer 8-15. In an embodiment, the fifteenthinorganic layer 8-15 may be disposed between the fourteenth inorganiclayer 7-14 and the sixteenth inorganic layer 8-16, and the sixteenthinorganic layer 8-16 may be disposed between the fifteenth inorganiclayer 8-15 and the lower inorganic layer 751, for example. The fifteenthinorganic layer 8-15 and the sixteenth inorganic layer 8-16 may contacteach other.

The eleventh inorganic layer 6-11 has a refractive index different froma refractive index of the twelfth inorganic layer 6-12. In anembodiment, the refractive index of the eleventh inorganic layer 6-11may be higher than the refractive index of the twelfth inorganic layer6-12, for example. The eleventh inorganic layer 6-11 may include amaterial having a relatively high refractive index, and the twelfthinorganic layer 6-12 may include a material having a relatively lowrefractive index. In an embodiment, the refractive index of the twelfthinorganic layer 6-12 may be higher than the refractive index of theeleventh inorganic layer 6-11.

The eleventh inorganic layer 6-11 may include a material substantiallythe same as a material included in the first inorganic layer 1-01described above, and the twelfth inorganic layer 6-12 may include amaterial substantially the same as a material included in the secondinorganic layer 1-02 described above.

The thirteenth inorganic layer 7-13 has a refractive index differentfrom a refractive index of the fourteenth inorganic layer 7-14. In anembodiment, the refractive index of the thirteenth inorganic layer 7-13may be higher than the refractive index of the fourteenth inorganiclayer 7-14, for example. The thirteenth inorganic layer 7-13 may includea material having a relatively high refractive index, and the fourteenthinorganic layer 7-14 may include a material having a relatively lowrefractive index. In an embodiment, the refractive index of thefourteenth inorganic layer 7-14 may be higher than the refractive indexof the thirteenth inorganic layer 7-13.

The thirteenth inorganic layer 7-13 may include a material substantiallythe same as a material included in the first inorganic layer 1-01described above, and the fourteenth inorganic layer 7-14 may include amaterial substantially the same as a material included in the secondinorganic layer 1-02 described above.

The fifteenth inorganic layer 8-15 has a refractive index different froma refractive index of the sixteenth inorganic layer 8-16. In anembodiment, the refractive index of the fifteenth inorganic layer 8-15may be higher than the refractive index of the sixteenth inorganic layer8-16, for example. The fifteenth inorganic layer 8-15 may include amaterial having a relatively high refractive index, and the sixteenthinorganic layer 8-16 may include a material having a relatively lowrefractive index. In an embodiment, the refractive index of thesixteenth inorganic layer 8-16 may be higher than the refractive indexof the fifteenth inorganic layer 8-15.

The fifteenth inorganic layer 8-15 may include a material substantiallythe same as a material included in the first inorganic layer 1-01described above, and the sixteenth inorganic layer 8-16 may include amaterial substantially the same as a material included in the secondinorganic layer 1-02 described above.

FIG. 15 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include an organic layer 755, an upperinorganic layer 752, and a plurality of composite inorganic layers 1000,as illustrated in FIG. 15 . In an embodiment, the plurality of compositeinorganic layers 1000 may include a first composite inorganic layer1001, a second composite inorganic layer 1002, a third compositeinorganic layer 1003, a fourth composite inorganic layer 1004, a fifthcomposite inorganic layer 1005, a sixth composite inorganic layer 1006,a seventh composite inorganic layer 1007, and an eighth compositeinorganic layer 1008, for example.

The sealing portion 750 of FIG. 15 does not include a lower inorganiclayer 751, dissimilar to the sealing portion 750 of FIG. 14 describedabove.

The organic layer 755, the upper inorganic layer 752, and the first toeighth composite inorganic layers 1001 to 1008 of FIG. 15 aresubstantially the same as the organic layer 755, the upper inorganiclayer 752, and the first to eighth composite inorganic layers 1001 to1008 of FIG. 14 described above, respectively. However, the eighthcomposite inorganic layer 1008 of FIG. 15 may be disposed between theseventh composite inorganic layer 1007 and the organic layer 755.

FIG. 16 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, and a plurality ofcomposite inorganic layers 1000, as illustrated in FIG. 16 . In anembodiment, the composite inorganic layers 1000 may include a firstcomposite inorganic layer 1011, a second composite inorganic layer 1022,a third composite inorganic layer 1033, and a fourth composite inorganiclayer 1044, for example.

The first composite inorganic layer 1011 may be disposed on the upperinorganic layer 752. In an embodiment, the first composite inorganiclayer 1011 may be disposed between the upper inorganic layer 752 and thesecond composite inorganic layer 1022, for example.

The second composite inorganic layer 1022 may be disposed on the firstcomposite inorganic layer 1011. In an embodiment, the second compositeinorganic layer 1022 may be disposed between the first compositeinorganic layer 1011 and the third composite inorganic layer 1033, forexample.

The third composite inorganic layer 1033 may be disposed on the secondcomposite inorganic layer 1022. In an embodiment, the third compositeinorganic layer 1033 may be disposed between the second compositeinorganic layer 1022 and the fourth composite inorganic layer 1044, forexample.

The fourth composite inorganic layer 1044 may be disposed on the thirdcomposite inorganic layer 1033.

The first composite inorganic layer 1011 may include a first inorganiclayer 11-01 and a second inorganic layer 11-02 disposed on the firstinorganic layer 11-01. In an embodiment, the first inorganic layer 11-01may be disposed between the upper inorganic layer 752 and the secondinorganic layer 11-02, and the second inorganic layer 11-02 may bedisposed between the first inorganic layer 11-01 and the secondcomposite inorganic layer 1022, for example. The first inorganic layer11-01 and the second inorganic layer 11-02 may contact each other.

The second composite inorganic layer 1022 may include a third inorganiclayer 22-03 and a fourth inorganic layer 22-04 disposed on the thirdinorganic layer 22-03. In an embodiment, the third inorganic layer 22-03may be disposed between the second inorganic layer 11-02 and the fourthinorganic layer 22-04, and the fourth inorganic layer 22-04 may bedisposed between the third inorganic layer 22-03 and the third compositeinorganic layer 1033, for example. The third inorganic layer 22-03 andthe fourth inorganic layer 22-04 may contact each other.

The third composite inorganic layer 1033 may include a fifth inorganiclayer 33-05 and a sixth inorganic layer 33-06 disposed on the fifthinorganic layer 33-05. In an embodiment, the fifth inorganic layer 33-05may be disposed between the fourth inorganic layer 22-04 and the sixthinorganic layer 33-06, and the sixth inorganic layer 33-06 may bedisposed between the fifth inorganic layer 33-05 and the fourthcomposite inorganic layer 1044, for example. The fifth inorganic layer33-05 and the sixth inorganic layer 33-06 may contact each other.

The fourth composite inorganic layer 1044 may include a seventhinorganic layer 44-07 and an eighth inorganic layer 44-08 disposed onthe seventh inorganic layer 44-07. In an embodiment, the seventhinorganic layer 44-07 may be disposed between the sixth inorganic layer33-06 and the eighth inorganic layer 44-08, and the eighth inorganiclayer 44-08 may be disposed on the seventh inorganic layer 44-07, forexample. The seventh inorganic layer 44-07 and the eighth inorganiclayer 44-08 may contact each other.

The first inorganic layer 11-01 has a refractive index different from arefractive index of the second inorganic layer 11-02. In an embodiment,the refractive index of the first inorganic layer 11-01 may be higherthan the refractive index of the second inorganic layer 11-02, forexample. The first inorganic layer 11-01 may include a material having arelatively high refractive index, and the second inorganic layer 11-02may include a material having a relatively low refractive index.

In an embodiment, for example, the first inorganic layer 11-01 and thesecond inorganic layer 11-02 may include one of inorganic materials suchas TiO₂, SiN_(x), AlO_(x), and SiO_(x). In a further embodiment, thefirst inorganic layer 11-01 may include TiO₂, and the second inorganiclayer 11-02 may include any one of SiN_(x), AlO_(x), and SiO_(x) whichhave a refractive index lower than that of TiO₂, for example.

A difference between the refractive index of the first inorganic layer11-01 and the refractive index of the second inorganic layer 11-02 maybe about 0.4 or more, for example. In an embodiment, the first inorganiclayer 11-01 may include TiO₂, and the second inorganic layer 11-02 mayinclude SiO_(x), for example. Since TiO₂ has a refractive index of about2.288, and SiO_(x) has a refractive index in a range from about 1.833 toabout 1.882, the first inorganic layer 11-01 and the second inorganiclayer 11-02 which include these materials may have a refractive indexdifference in a range from about 0.406 to about 0.455, for example.

In an embodiment, the refractive index of the second inorganic layer11-02 may be higher than the refractive index of the first inorganiclayer 11-01. In such an embodiment, the second inorganic layer 11-02 mayinclude TiO₂, and the first inorganic layer 11-01 may include any one ofSiN_(x), AlO_(x), and SiO_(x) which have a refractive index lower thanthat of TiO₂.

The third inorganic layer 22-03 has a refractive index different from arefractive index of the fourth inorganic layer 22-04. In an embodiment,the refractive index of the third inorganic layer 22-03 may be higherthan the refractive index of the fourth inorganic layer 22-04, forexample. The third inorganic layer 22-03 may include a material having arelatively high refractive index, and the fourth inorganic layer 22-04may include a material having a relatively low refractive index. In anembodiment, the refractive index of the fourth inorganic layer 22-04 maybe higher than the refractive index of the third inorganic layer 22-03.

The third inorganic layer 22-03 may include a material substantially thesame as a material included in the first inorganic layer 11-01 describedabove, and the fourth inorganic layer 22-04 may include a materialsubstantially the same as a material included in the second inorganiclayer 11-02.

The fifth inorganic layer 33-05 has a refractive index different from arefractive index of the sixth inorganic layer 33-06. In an embodiment,the refractive index of the fifth inorganic layer 33-05 may be higherthan the refractive index of the sixth inorganic layer 33-06, forexample. The fifth inorganic layer 33-05 may include a material having arelatively high refractive index, and the sixth inorganic layer 33-06may include a material having a relatively low refractive index. In anembodiment, the refractive index of the sixth inorganic layer 33-06 maybe higher than the refractive index of the fifth inorganic layer 33-05.

The fifth inorganic layer 33-05 may include a material substantially thesame as a material included in the first inorganic layer 11-01 describedabove, and the sixth inorganic layer 33-06 may include a materialsubstantially the same as a material included in the second inorganiclayer 11-02 described above.

The seventh inorganic layer 44-07 has a refractive index different froma refractive index of the eighth inorganic layer 44-08. In anembodiment, the refractive index of the seventh inorganic layer 44-07may be higher than the refractive index of the eighth inorganic layer44-08, for example. The seventh inorganic layer 44-07 may include amaterial having a relatively high refractive index, and the eighthinorganic layer 44-08 may include a material having a relatively lowrefractive index. In an embodiment, the refractive index of the eighthinorganic layer 44-08 may be higher than the refractive index of theseventh inorganic layer 44-07.

The seventh inorganic layer 44-07 may include a material substantiallythe same as a material included in the first inorganic layer 11-01described above, and the eighth inorganic layer 44-08 may include amaterial substantially the same as a material included in the secondinorganic layer 11-02 described above.

In another embodiments, the second to fourth composite inorganic layers1022 to 1044 may be omitted in FIG. 16 .

FIG. 17 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, and a plurality of composite inorganic layers 1000,as illustrated in FIG. 17 . In an embodiment, the composite inorganiclayers 1000 may include a first composite inorganic layer 1011, a secondcomposite inorganic layer 1022, a third composite inorganic layer 1033,and a fourth composite inorganic layer 1044, for example.

The sealing portion 750 of FIG. 17 , dissimilar to the sealing portion750 of FIG. 16 , does not include the upper inorganic layer 752.

The organic layer 755, the lower inorganic layer 751, and the first tofourth composite inorganic layers 1011 to 1044 in FIG. 17 aresubstantially the same as those in FIG. 16 described above. However, thefirst composite inorganic layer 1011 of FIG. 17 may be disposed betweenthe organic layer 755 and the second composite inorganic layer 1022.

FIG. 18 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, and a plurality ofcomposite inorganic layers 1000, as illustrated in FIG. 18 . In anembodiment, the composite inorganic layers 1000 may include a firstlower composite inorganic layer 1001, a second lower composite inorganiclayer 1002, a third lower composite inorganic layer 1003, a fourth lowercomposite inorganic layer 1004, a first upper composite inorganic layer1011, a second upper composite inorganic layer 1022, a third uppercomposite inorganic layer 1033, and a fourth upper composite inorganiclayer 1044, for example.

The first lower composite inorganic layer 1001, the second lowercomposite inorganic layer 1002, the third lower composite inorganiclayer 1003, and the fourth lower composite inorganic layer 1004 of FIG.18 are substantially the same as the first composite inorganic layer1001, the second composite inorganic layer 1002, the third compositeinorganic layer 1003, and the fourth composite inorganic layer 1004 ofFIG. 12 described above, respectively.

The first upper composite inorganic layer 1011, the second uppercomposite inorganic layer 1022, the third upper composite inorganiclayer 1033, and the fourth upper composite inorganic layer 1044 of FIG.18 are substantially the same as the first composite inorganic layer1011, the second composite inorganic layer 1022, the third compositeinorganic layer 1033, and the fourth composite inorganic layer 1044 ofFIG. 16 described above, respectively.

FIG. 19 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include an organic layer 755 and a pluralityof composite inorganic layers 1000, as illustrated in FIG. 19 . In anembodiment, the composite inorganic layers 1000 may include a firstlower composite inorganic layer 1001, a second lower composite inorganiclayer 1002, a third lower composite inorganic layer 1003, a fourth lowercomposite inorganic layer 1004, a first upper composite inorganic layer1011, a second upper composite inorganic layer 1022, a third uppercomposite inorganic layer 1033, and a fourth upper composite inorganiclayer 1044, for example.

The sealing portion 750 of FIG. 19 , dissimilar to the sealing portion750 of FIG. 18 , does not include the lower inorganic layer 751 and theupper inorganic layer 752.

The organic layer 755, the first to fourth lower composite inorganiclayers 1001 to 1004, and the first to fourth upper composite inorganiclayers 1011 to 1044 of FIG. 19 are substantially the same as the organiclayer 755, the first to fourth lower composite inorganic layers 1001 to1004, and the first to fourth upper composite inorganic layers 1011 to1044 of FIG. 18 , respectively. However, the fourth lower compositeinorganic layer 1004 of FIG. 19 may be disposed between the third lowercomposite inorganic layer 1003 and the organic layer 755, and the firstupper composite inorganic layer 1011 of FIG. 19 may be disposed betweenthe organic layer 755 and the second upper composite inorganic layer1022.

FIG. 20 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include an organic layer 755, a lowerinorganic layer 751, and a plurality of composite inorganic layers 1000,as illustrated in FIG. 20 . In an embodiment, the composite inorganiclayers 1000 may include a first lower composite inorganic layer 1001, asecond lower composite inorganic layer 1002, a third lower compositeinorganic layer 1003, a fourth lower composite inorganic layer 1004, afirst upper composite inorganic layer 1011, a second upper compositeinorganic layer 1022, a third upper composite inorganic layer 1033, anda fourth upper composite inorganic layer 1044, for example.

The sealing portion 750 of FIG. 20 , dissimilar to the sealing portion750 of FIG. 18 , does not include the upper inorganic layer 752.

The organic layer 755, the lower inorganic layer 751, the first tofourth lower composite inorganic layers 1001 to 1004, and the first tofourth upper composite inorganic layers 1011 to 1044 of FIG. 20 aresubstantially the same as those of FIG. 18 , respectively. However, thefirst upper composite inorganic layer 1011 of FIG. 20 may be disposedbetween the organic layer 755 and the second upper composite inorganiclayer 1022.

FIG. 21 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include an organic layer 755, an upperinorganic layer 752, and a plurality of composite inorganic layers 1000,as illustrated in FIG. 21 . In an embodiment, the composite inorganiclayers 1000 may include a first lower composite inorganic layer 1001, asecond lower composite inorganic layer 1002, a third lower compositeinorganic layer 1003, a fourth lower composite inorganic layer 1004, afirst upper composite inorganic layer 1011, a second upper compositeinorganic layer 1022, a third upper composite inorganic layer 1033, anda fourth upper composite inorganic layer 1044, for example.

The sealing portion 750 of FIG. 21 , dissimilar to the sealing portion750 of FIG. 18 , does not include the lower inorganic layer 751.

The organic layer 755, the upper inorganic layer 752, the first tofourth lower composite inorganic layers 1001 to 1004, and the first tofourth upper composite inorganic layers 1011 to 1044 of FIG. 21 aresubstantially the same as those of FIG. 18 , respectively.

However, the fourth lower composite inorganic layer 1004 of FIG. 21 maybe disposed between the third lower composite inorganic layer 1003 andthe organic layer 755.

As in the various embodiments described above, the sealing portion mayinclude at least one composite inorganic layer. In other words, thesealing portion may have a composite inorganic monolayer structureincluding one composite inorganic layer, or a composite inorganicmultilayer structure including a plurality of composite inorganiclayers.

In such an embodiment, in the composite inorganic multilayer structure,an inorganic layer included in one of adjacent ones of the compositeinorganic layers and an inorganic layer included in another of theadjacent ones of the composite inorganic layers face each other, and arefractive index of one of the two facing inorganic layers and arefractive index of the other of the two facing inorganic layers aredifferent from each other. In an embodiment, as illustrated in FIG. 12 ,the second inorganic layer 1-02 of the first composite inorganic layer1001 and the third inorganic layer 2-03 of the second compositeinorganic layer 1002 face each other, and a refractive index of thesecond inorganic layer 1-02 and a refractive index of the thirdinorganic layer 2-03 are different from each other, for example.

In addition, an inorganic layer included in one of adjacent ones of thecomposite inorganic layers and an inorganic layer included in another ofthe adjacent ones of the composite inorganic layers face each other, andthe two facing inorganic layers may contact each other. In anembodiment, as illustrated in FIG. 12 , the second inorganic layer 1-02of the first composite inorganic layer 1001 and the third inorganiclayer 2-03 of the second composite inorganic layer 1002 adjacent theretoface each other, and the second inorganic layer 1-02 and the thirdinorganic layer 2-03 may contact each other, for example.

FIG. 22 is a view enlarging a portion A of another embodiment of FIG. 9

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, an auxiliary inorganiclayer 2000, and a plurality of composite inorganic layers 1000, asillustrated in FIG. 22 . In an embodiment, the composite inorganiclayers 1000 may include a first composite inorganic layer 1001, a secondcomposite inorganic layer 1002, a third composite inorganic layer 1003,and a fourth composite inorganic layer 1004, for example.

The first composite inorganic layer 1001, the second composite inorganiclayer 1002, the third composite inorganic layer 1003, and the fourthcomposite inorganic layer 1004 of FIG. 22 are substantially the same asthe first composite inorganic layer 1001, the second composite inorganiclayer 1002, the third composite inorganic layer 1003, and the fourthcomposite inorganic layer 1004 of FIG. 12 , respectively.

The auxiliary inorganic layer 2000 is disposed close to one of thecomposite inorganic layers that is disposed closest to the organic layer755. In an embodiment, the auxiliary inorganic layer 2000 may bedisposed on the fourth composite inorganic layer 1004. In a furtherembodiment, the auxiliary inorganic layer 2000 may be disposed betweenan eighth inorganic layer 4-08 and the lower inorganic layer 751, forexample. In such an embodiment, the auxiliary inorganic layer 2000 maycontact the eighth inorganic layer 4-08 and the lower inorganic layer751.

The auxiliary inorganic layer 2000 may have a refractive indexsubstantially equal to a refractive index of any inorganic layerincluded in the fourth composite inorganic layer 1004 that is adjacentthereto. In such an embodiment, the auxiliary inorganic layer 2000 mayhave a refractive index substantially equal to a refractive index of oneof inorganic layers included in the fourth composite inorganic layer1004 that is disposed farther from the auxiliary inorganic layer 2000.In an embodiment, the auxiliary inorganic layer 2000 may have arefractive index substantially equal to a refractive index of a seventhinorganic layer 4-07, for example.

FIG. 23 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, an auxiliary inorganiclayer 4000, and a plurality of composite inorganic layers 1000, asillustrated in FIG. 23 . In an embodiment, the composite inorganiclayers 1000 may include a first composite inorganic layer 1011, a secondcomposite inorganic layer 1022, a third composite inorganic layer 1033,and a fourth composite inorganic layer 1044, for example.

The first composite inorganic layer 1011, the second composite inorganiclayer 1022, the third composite inorganic layer 1033, and the fourthcomposite inorganic layer 1044 of FIG. 23 are substantially the same asthe first composite inorganic layer 1011, the second composite inorganiclayer 1022, the third composite inorganic layer 1033, and the fourthcomposite inorganic layer 1044 of FIG. 16 , respectively.

The auxiliary inorganic layer 4000 is disposed close to one of thecomposite inorganic layers that is disposed closest to the organic layer755. In an embodiment, the auxiliary inorganic layer 4000 may bedisposed beneath the first composite inorganic layer 1011. In a furtherembodiment, the auxiliary inorganic layer 4000 may be disposed between afirst inorganic layer 11-01 and the upper inorganic layer 752, forexample. In such an embodiment, the auxiliary inorganic layer 4000 maycontact the first inorganic layer 11-01 and the upper inorganic layer752.

The auxiliary inorganic layer 4000 may have a refractive indexsubstantially equal to a refractive index of any inorganic layerincluded in the first composite inorganic layer 1011 that is adjacentthereto. In such an embodiment, the auxiliary inorganic layer 4000 mayhave a refractive index substantially equal to a refractive index of oneof inorganic layers included in the first composite inorganic layer 1011that is disposed farther from the auxiliary inorganic layer 4000. In anembodiment, the auxiliary inorganic layer 4000 may have a refractiveindex substantially equal to a refractive index of a second inorganiclayer 11-02, for example.

FIG. 24 is a view enlarging a portion A of another embodiment of FIG. 9.

A sealing portion 750 may include a lower inorganic layer 751, anorganic layer 755, an upper inorganic layer 752, an auxiliary inorganiclayer, and a plurality of composite inorganic layers 1000, asillustrated in FIG. 24 . In an embodiment, the composite inorganiclayers 1000 may include a first composite inorganic layer 1001, a secondcomposite inorganic layer 1002, a third composite inorganic layer 1003,and a fourth composite inorganic layer 1004, for example.

The first composite inorganic layer 1001, the second composite inorganiclayer 1002, the third composite inorganic layer 1003, and the fourthcomposite inorganic layer 1004 of FIG. 24 are substantially the same asthe first composite inorganic layer 1001, the second composite inorganiclayer 1002, the third composite inorganic layer 1003, and the fourthcomposite inorganic layer 1004 of FIG. 12 , respectively.

As illustrated in FIG. 24 , a protective layer 6000 may be disposedbetween a common electrode 613 and the sealing portion 750.

The protective layer 6000 may be disposed on the common electrode 613 tooverlap an entire surface of a substrate 110. This protective layer 6000may include at least one of a capping layer 6000 a and a metal layer6000 b.

The capping layer 6000 a is disposed on the common electrode 613. In anembodiment, the capping layer 6000 a is disposed between the commonelectrode 613 and the metal layer 6000 b, for example. The capping layer6000 a may be, for example, the organic layer 755 including an organicmaterial.

The metal layer 6000 b is disposed on the capping layer 6000 a. In anembodiment, the metal layer 6000 b may be disposed between the cappinglayer 6000 a and the first composite inorganic layer 1001, for example.In an embodiment, the metal layer 6000 b may include, for example, LiF.

FIG. 25 is an exploded perspective view illustrating the compositeinorganic layer of FIG. 11 .

As illustrated in FIG. 25 , an interface S1 (hereinafter, also referredto as “a first interface”) between the first inorganic layer 1-01 andthe second inorganic layer 1-02 of the composite inorganic layer 1000may have a concavo-convex pattern. In other words, the first interfaceS1 may include concave portions 11 a and 22 a and convex portions 11 band 22 b. With such a structure, the adhesive force between the firstinorganic layer 1-01 and the second inorganic layer 1-02 may beimproved.

The first interface S1 includes a surface 11 of the first inorganiclayer 1-01 and a surface 22 of the second inorganic layer 1-02 mutuallyfacing each other. When the surface of the first inorganic layer 1-01facing the surface 22 is defined as a first surface 11, the surface ofthe second inorganic layer 1-02 facing the first surface 11 is definedas a second surface 22. The first surface 11 includes the concaveportion 11 a and the convex portion 11 b, and the second surface 22includes the concave portion 22 a and the convex portion 22 b. In suchan embodiment, the convex portion 11 b of the first surface 11 isinserted into the concave portion 22 a of the second surface 22, and theconvex portion 22 b of the second surface 22 is inserted into theconcave portion 11 a of the first surface 11.

In an embodiment, the convex portions 11 b and 22 b of the firstinterface S1 may have a triangular column shape, as in the example ofFIG. 25 . As another example, the convex portions 11 b and 22 b of thefirst interface S1 may have various other shapes such as a quadrangularcolumn shape or a semicircular column shape.

In addition, an interface S2 (hereinafter, also referred to as “a secondinterface”) between the second inorganic layer 1-02 and the lowerinorganic layer 751 may have a concavo-convex pattern. In other words,the second interface S2 may include concave portions 33 a and 44 a andconvex portions 33 b and 44 b. With such a structure, the adhesive forcebetween the second inorganic layer 1-02 and the lower inorganic layer751 may be improved.

The second interface S2 includes a surface 33 of the second inorganiclayer 1-02 and a surface 44 of the lower inorganic layer 751. When thesurface of the second inorganic layer 1-02 facing the surface 44 isdefined as a third surface 33, the surface of the fourth inorganic layer1-02 facing the third surface 33 is defined as a fourth surface 44. Thethird surface 33 includes the concave portion 33 a and the convexportion 33 b, and the fourth surface 44 includes the concave portion 44a and the convex portion 44 b. In such an embodiment, the convex portion33 b of the third surface 33 is inserted into the concave portion 44 aof the fourth surface 44, and the convex portion 44 b of the fourthsurface 44 is inserted into the concave portion 33 a of the thirdsurface 33.

In an embodiment, the convex portions 33 b and 44 b of the secondinterface S2 may have a triangular column shape, as in the example ofFIG. 25 . In another embodiment, the convex portions 33 b and 44 b ofthe second interface S2 may have various other shapes such as aquadrangular column shape or a semicircular column shape.

An arrangement direction of the convex portions 11 b or 22 b included inthe first interface S1 and an arrangement direction of the convexportions 33 b or 44 b included in the second interface S2 may cross eachother. In an embodiment, for example, as illustrated in FIG. 25 , theconvex portions 11 b of the first interface S1 may be arranged along theX-axis direction, and the convex portions 33 b of the second interfaceS2 may be arranged along the Y-axis direction. With such a structure,the brightness of light that passes through the sealing portion 750 maybe improved in addition to the improvement of the adhesion between theneighboring layers.

As illustrated in FIG. 25 , the convex portions 11 b and 22 b of thefirst interface S1 and the convex portions 33 b and 44 b of the secondinterface S2 may have a substantially same shape.

In an alternative embodiment, although not illustrated, the convexportions 11 b and 22 b of the first interface S1 and the convex portions33 b and 44 b of the second interface S2 may have different shapes. Inan embodiment, the convex portions 11 b and 22 b of the first interfaceS1 may have a triangular column shape, and the convex portions 33 b and44 b of the second interface S2 may have a quadrangular column shape,for example.

FIG. 26 is a diagram illustrating a change in transmittance of anembodiment of a composite inorganic multilayer depending on thesunlight.

In FIG. 26 , the X-axis represents the wavelength of sunlight, and theY-axis represents the transmittance (i.e., the light transmittance).

A composite inorganic layer of FIG. 26 includes a TiO₂ inorganic layer(e.g., the first inorganic layer 1-01) and an Al₂O₃ inorganic layer(e.g., the second inorganic layer 1-02).

First to seventh curves C1 to C7 show the transmittance of eachcomposite inorganic multilayer depending on the wavelength of sunlight.Specifically, the first curve C1 represents a transmittance change of afirst composite inorganic multilayer including two (e.g., two pairs of)composite inorganic layers, the second curve C2 represents atransmittance change of a second composite inorganic multilayerincluding three (e.g., three pairs of) composite inorganic layers, thethird curve C3 represents a transmittance change of a third compositeinorganic multilayer including four (e.g., four pairs of) compositeinorganic layers, the fourth curve C4 represents a transmittance changeof a fourth composite inorganic multilayer including five (e.g., fivepairs of) composite inorganic layers, the fifth curve C5 represents atransmittance change of a fifth composite inorganic multilayer includingsix (e.g., six pairs of) composite inorganic layers, the sixth curve C6represents a transmittance change of a sixth composite inorganicmultilayer including seven (e.g., seven pairs of) composite inorganiclayers, and the seventh curve C7 represents a transmittance change of aseventh composite inorganic multilayer including eight (e.g., eightpairs of) composite inorganic layers.

The first composite inorganic layer has a structure in which two TiO₂inorganic layers and two Al₂O₃ inorganic layers are alternately stacked,the second composite inorganic layer has a structure in which three TiO₂inorganic layers and three Al₂O₃ inorganic layers are alternatelystacked, the third composite inorganic layer has a structure in whichfour TiO₂ inorganic layers and four Al₂O₃ inorganic layers arealternately stacked, the fourth composite inorganic layer has astructure in which five TiO₂ inorganic layers and five Al₂O₃ inorganiclayers are alternately stacked, the fifth composite inorganic layer hasa structure in which six TiO₂ inorganic layers and six Al₂O₃ inorganiclayers are alternately stacked, the sixth composite inorganic layer hasa structure in which seven TiO₂ inorganic layers and seven Al₂O₃inorganic layers are alternately stacked, and the seventh compositeinorganic layer has a structure in which eight TiO₂ inorganic layers andeight Al₂O₃ inorganic layers are alternately stacked.

As illustrated in FIG. 26 , in the wavelength range of ultraviolet(“UV”) light (e.g., the wavelength range from about 320 nm to about 405nm), the first to seventh composite inorganic multilayers haverelatively low transmittance (e.g., a transmittance of about one-tenth(0.1) of a maximum transmittance or less or about 10% of a maximumtransmittance or less). Accordingly, the sealing portion 750 includingthe composite inorganic layer in an embodiment the invention may have anexcellent UV-ray blocking ability.

FIG. 27 is a diagram illustrating a change in transmittance of anembodiment of the composite inorganic multilayer depending on theapplication of sunlight.

In FIG. 27 , the X-axis represents the wavelength of sunlight, and theY-axis represents the transmittance (i.e., the light transmittance).

A composite inorganic layer of FIG. 27 includes a TiO₂ inorganic layer(e.g., the first inorganic layer 1-01) and an Al₂O₃ inorganic layer(e.g., the second inorganic layer 1-02).

Each curve C0, C1, and C2 of FIG. 27 represents transmittance of acomposite inorganic multilayer including six (e.g., six pairs of)composite inorganic layers disposed on a SiN_(x) layer having athickness of about 3000 Angstroms (Å) for each condition. Specifically,a reference curve C0 represents a simulation result of transmittance ofthe composite inorganic multilayer, a first curve C1 representstransmittance of the composite inorganic multilayer (hereinafter, alsoreferred to as “first composite inorganic multilayer”) before thesunlight is applied thereto, and a second curve C2 representstransmittance of the composite inorganic multilayer (hereinafter, alsoreferred to as “second composite inorganic multilayer”) to which thesunlight is applied for a predetermined period of time.

As illustrated in FIG. 27 , in the wavelength range of UV ray (e.g., thewavelength range from about 320 nm to about 405 nm), the first compositeinorganic multilayer and the second composite inorganic multilayer haverelatively low transmittance (e.g., a transmittance of about one-tenth(0.1) of a maximum transmittance or less or about 10% of a maximumtransmittance or less). In addition, the first composite inorganicmultilayer and the second composite inorganic multilayer have asubstantially equal transmittance in the UV wavelength range.Accordingly, the sealing portion including the composite inorganic layerin an embodiment the invention may have an excellent UV-ray blockingability after the sunlight is applied thereto for a relatively longtime.

FIG. 28 is a diagram illustrating a change in transmittance of anotherembodiment of the composite inorganic multilayer depending on theapplication of sunlight.

In FIG. 28 , the X-axis represents the wavelength of sunlight, and theY-axis represents the transmittance (i.e., the light transmittance).

A composite inorganic layer of FIG. 28 includes a TiO₂ inorganic layer(e.g., the first inorganic layer 1-01) and an Al₂O₃ inorganic layer(e.g., the second inorganic layer 1-02).

Each curve C0, C1, and C2 of FIG. 28 represents transmittance of acomposite inorganic multilayer including six (e.g., six pairs of)composite inorganic layers disposed on a bear glass. Specifically, areference curve C0 represents a simulation result of transmittance ofthe composite inorganic multilayer, a first curve C1 representstransmittance of the composite inorganic multilayer (hereinafter, alsoreferred to as “first composite inorganic multilayer”) before thesunlight is applied thereto, and a second curve C2 representstransmittance of the composite inorganic multilayer (hereinafter, alsoreferred to as “second composite inorganic multilayer”) to which thesunlight is applied for a predetermined period of time.

As illustrated in FIG. 28 , in the wavelength range of UV ray (e.g., thewavelength range from about 320 nm to about 405 nm), the first compositeinorganic multilayer and the second composite inorganic multilayer haverelatively low transmittance (e.g., a transmittance of about one-tenth(0.1) of a maximum transmittance or less or about 10% of a maximumtransmittance or less). In addition, the first composite inorganicmultilayer and the second composite inorganic multilayer have asubstantially equal transmittance in the UV wavelength range.Accordingly, the sealing portion including the composite inorganic layerin the embodiment the invention may have an excellent UV-ray blockingability after the sunlight is applied thereto for a relatively longtime.

FIG. 29 is a table showing an embodiment of a material and a refractiveindex of each inorganic layer included in the composite inorganic layeraccording to the invention.

As illustrated in FIG. 29 , TiO₂ has a refractive index of about 2.288,SiN_(x) has a refractive index in a range from about 1.833 to about1.882, AlO_(x) has a refractive index in a range from about 1.627 toabout 1.677, and SiO_(x) has a refractive index in a range from about1.463 to about 1.487.

In addition, the refractive index difference between TiO₂ and eachmaterial is shown in FIG. 29 , and a refractive index difference (0.825)between TiO₂ and SiO_(x) is the largest. In an embodiment, one compositeinorganic layer may include TiO₂ as a high refractive index material(e.g., a material for the first inorganic layer 1-01) and may includeSiO_(x) as a low refractive index material (e.g., a material for thesecond inorganic layer 1-02), for example.

FIG. 30 is a table showing an embodiment of combinations of a compositeinorganic layer and the transmittance of the combinations for eachwavelength according to the invention.

As illustrated in FIG. 30 , the composite inorganic layer in anembodiment of the invention may have a combination {circle around(1)}(hereinafter, also referred to as “first combination”) including afirst inorganic layer 1-01 of TiO_(x) and a second inorganic layer 1-02of SiN_(x) (n=1.882).

In addition, as illustrated in FIG. 30 , the composite inorganic layerin an embodiment of the invention may have a combination {circle around(2)} (hereinafter, also referred to as “second combination”) including afirst inorganic layer 1-01 of TiO₂ and a second inorganic layer 1-02 ofSiN_(x) (n=1.833).

In addition, as illustrated in FIG. 30 , the composite inorganic layerin an embodiment of the invention may have a combination {circle around(3)} (hereinafter, also referred to as “third combination”) including afirst inorganic layer 1-01 of TiO₂ and a second inorganic layer 1-02 ofAlO_(x) (n=1.677).

In addition, as illustrated in FIG. 30 , the composite inorganic layerin an embodiment of the invention may have a combination {circle around(4)} (hereinafter, also referred to as “fourth combination”) including afirst inorganic layer 1-01 of TiO₂ and a second inorganic layer 1-02 ofAlO_(x) (n=1.627).

In addition, as illustrated in FIG. 30 , the composite inorganic layerin an embodiment of the invention may have a combination {circle around(5)} (hereinafter, also referred to as “fifth combination”) including afirst inorganic layer 1-01 of TiO₂ and a second inorganic layer 1-02 ofSiO_(x) (n=1.487).

In addition, as illustrated in FIG. 30 , the composite inorganic layerin an embodiment of the invention may have a combination {circle around(6)} (hereinafter, also referred to as “sixth combination”) including afirst inorganic layer 1-01 of TiO₂ and a second inorganic layer 1-02 ofSiO_(x) (n=1.463).

As illustrated in FIG. 30 , the transmittances of the first combination{circle around (1)} in the wavelength range of about 405 nm and about450 nm are about 11.46% and about 70.88%, respectively, thetransmittances of the second combination {circle around (2)} in thewavelength range of about 405 nm and about 450 nm are about 10.60% andabout 74.35%, respectively, the transmittances of the third combination{circle around (3)} in the wavelength range of about 405 nm and about450 nm are about 8.60% and about 76.89%, respectively, thetransmittances of the fourth combination {circle around (4)} in thewavelength range of about 405 nm and about 450 nm are about 8.08% andabout 77.33%, respectively, the transmittances of the fifth combination{circle around (5)} in the wavelength range of about 405 nm and about450 nm are about 7.41% and about 78.10%, respectively, and thetransmittances of the sixth combination {circle around (6)} in thewavelength range of about 405 nm and about 450 nm are about 7.25% andabout 78.30%, respectively.

The first combination {circle around (1)} and the second combination{circle around (2)} have relatively high transmittance in the relativelylow wavelength range (405 nm). The third combination {circle around(3)}, the fourth combination {circle around (4)}, the fifth combination{circle around (5)}, and the sixth combination {circle around (6)} haverelatively low transmittance (e.g., transmittance of about one-tenth(0.1) of a maximum transmittance or less or about 10% of a maximumtransmittance or less) in the relatively low wavelength range (405 nm).

FIG. 31 is a graph illustrating characteristics of each combination inFIG. 30 .

In FIG. 31 , the X-axis represents the wavelength of sunlight, and theY-axis represents the transmittance (i.e., the light transmittance).

As illustrated in FIG. 31 , the first curve C1 related to the firstcombination {circle around (1)} and the second curve C2 related to thesecond combination {circle around (2)} show transmittance higher thanabout one-tenth (0.1) of a maximum transmittance or about 10% of amaximum transmittance in the relatively low wavelength range (405 nm).The third curve C3 related to the third combination {circle around (3)},the fourth curve C4 related to the fourth combination {dot over (4)},the fifth curve C5 related to the fifth combination {circle around (5)},and the sixth curve C6 related to the sixth combination {circle around(6)} show relatively low transmittance (e.g., transmittance of aboutone-tenth (0.1) of a maximum transmittance or less or about 10% of amaximum transmittance or less) in the relatively low wavelength range(405 nm).

FIG. 32A is a table showing the transmittance of a composite inorganicmultilayer which is disposed on a SiN_(x) layer and includes SiN_(x) andSiO_(x), FIG. 32B is a graph illustrating the transmittance of thecomposite inorganic multilayer of FIG. 32A, and FIG. 32C is a viewenlarging a partial wavelength range of FIG. 32B.

In FIGS. 32B and 32C, the X-axis represents the wavelength of sunlight,and the Y-axis represents the transmittance (i.e., the lighttransmittance).

A composite inorganic layer of FIGS. 32A, 32B and 32C includes a SiN_(x)inorganic layer (e.g., the first inorganic layer 1-01) and a SiO_(x)inorganic layer (e.g., the second inorganic layer 1-02). In such anembodiment, the refractive index of SiN_(x) of the composite inorganiclayer may be about 1.833, and the refractive index of SiO_(x) of thecomposite inorganic layer may be about 1.487.

First to ninth curves C1 to C9 in FIGS. 32B and 32C show transmittanceof each composite inorganic multilayer depending on the wavelength ofsunlight.

Specifically, the first curve C1 represents a transmittance change of afirst composite inorganic multilayer including two (e.g., two pairs of)composite inorganic layers, the second curve C2 represents atransmittance change of a second composite inorganic multilayerincluding three (e.g., three pairs of) composite inorganic layers, thethird curve C3 represents a transmittance change of a third compositeinorganic multilayer including four (e.g., four pairs of) compositeinorganic layers, the fourth curve C4 represents a transmittance changeof a fourth composite inorganic multilayer including five (e.g., fivepairs of) composite inorganic layers, the fifth curve C5 represents atransmittance change of a fifth composite inorganic multilayer includingsix (e.g., six pairs of) composite inorganic layers, the sixth curve C6represents a transmittance change of a sixth composite inorganicmultilayer including seven (e.g., seven pairs of) composite inorganiclayers, the seventh curve C7 represents a transmittance change of aseventh composite inorganic multilayer including eight (e.g., eightpairs of) composite inorganic layers, the eighth curve C8 represents atransmittance change of an eighth composite inorganic multilayerincluding nine (e.g., nine pairs of) composite inorganic layers, and theninth curve C9 represents a transmittance change of a ninth compositeinorganic multilayer including ten (e.g., ten pairs of) compositeinorganic layers.

The first composite inorganic multilayer has a structure in which twoSiN_(x) inorganic layers and two SiO_(x) inorganic layers arealternately stacked on an SiN_(x) layer (e.g., the upper inorganic layer752), the second composite inorganic multilayer has a structure in whichthree SiN_(x) inorganic layers and three SiO_(x) inorganic layers arealternately stacked on the SiN_(x) layer (e.g., the upper inorganiclayer 752), the third composite inorganic multilayer has a structure inwhich four SiN_(x) inorganic layers and four SiO_(x) inorganic layersare alternately stacked on the SiN_(x) layer (e.g., the upper inorganiclayer 752), the fourth composite inorganic multilayer has a structure inwhich five SiN_(x) inorganic layers and five SiO_(x) inorganic layersare alternately stacked on the SiN_(x) layer (e.g., the upper inorganiclayer 752), the fifth composite inorganic multilayer has a structure inwhich six SiN_(x) inorganic layers and six SiO_(x) inorganic layers arealternately stacked on the SiN_(x) layer (e.g., the upper inorganiclayer 752), the sixth composite inorganic multilayer has a structure inwhich seven SiN_(x) inorganic layers and seven SiO_(x) inorganic layersare alternately stacked on the SiN_(x) layer (e.g., the upper inorganiclayer 752), the seventh composite inorganic multilayer has a structurein which eight SiN_(x) inorganic layers and eight SiO_(x) inorganiclayers are alternately stacked on the SiN_(x) layer (e.g., the upperinorganic layer 752), the eighth composite inorganic multilayer has astructure in which nine SiN_(x) inorganic layers and nine SiO_(x)inorganic layers are alternately stacked on the SiN_(x) layer (e.g., theupper inorganic layer 752), and the ninth composite inorganic multilayerhas a structure in which ten SiN_(x) inorganic layers and ten SiO_(x)inorganic layers are alternately stacked on the SiN_(x) layer (e.g., theupper inorganic layer 752).

FIG. 32A shows the transmittance of the fourth to ninth compositeinorganic multilayers.

As illustrated in FIG. 32 , the transmittances of the fourth compositeinorganic multilayer in the wavelength range of about 405 nm and about450 nm are about 23.76% and about 80.08%, respectively, thetransmittances of the fifth composite inorganic multilayer in thewavelength range of about 405 nm and about 450 nm are about 17.55% andabout 81.93%, respectively, the transmittances of the sixth compositeinorganic multilayer in the wavelength range of about 405 nm and about450 nm are about 12.74% and about 83.68%, respectively, thetransmittances of the seventh composite inorganic multilayer in thewavelength range of about 405 nm and about 450 nm are about 9.04% andabout 84.08%, respectively, the transmittances of the eighth compositeinorganic multilayer in the wavelength range of about 405 nm and about450 nm are about 6.37% and about 82.54%, respectively, and thetransmittances of the ninth composite inorganic multilayer in thewavelength range of about 405 nm and about 450 nm are about 4.50% andabout 80.14%, respectively.

As illustrated in FIGS. 32B and 32C, in the wavelength range of UV ray(e.g., the wavelength range from about 320 nm to about 405 nm), theseventh, eighth, and ninth composite inorganic multilayers haverelatively low transmittance (e.g., a transmittance of about one-tenth(0.1) of a maximum transmittance or less or about 10% of a maximumtransmittance or less). Accordingly, the sealing portion including oneof the seventh, eighth, and ninth composite inorganic multilayers mayhave an excellent UV-ray blocking ability.

FIG. 33A is a table showing the transmittance and the thickness of acomposite inorganic layer which is disposed on a SiN_(x) layer andincludes TiO₂ and Al₂O₃, FIG. 33B is a graph illustrating thetransmittance of the composite inorganic layer of FIG. 33A, and FIG. 33Cis a view enlarging a partial wavelength range of FIG. 33B.

In FIGS. 33B and 33C, the X-axis represents the wavelength of sunlight,and the Y-axis represents the transmittance (i.e., the lighttransmittance).

A composite inorganic layer of FIGS. 33A, 33B and 33C includes a TiO₂inorganic layer (e.g., the first inorganic layer 1-01) and an Al₂O₃inorganic layer (e.g., the second inorganic layer 1-02). In such anembodiment, the refractive index of TiO₂ of the composite inorganiclayer may be about 2.288, and the refractive index of Al₂O₃ of thecomposite inorganic layer may be about 1.627.

First to seventh curves C1 to C7 in FIGS. 33B and 33C show transmittanceof each composite inorganic multilayer depending on the wavelength ofsunlight. Specifically, the first curve C1 represents a transmittancechange of a first composite inorganic multilayer including two (e.g.,two pairs of) composite inorganic layers, the second curve C2 representsa transmittance change of a second composite inorganic multilayerincluding three (e.g., three pairs of) composite inorganic layers, thethird curve C3 represents a transmittance change of a third compositeinorganic multilayer including four (e.g., four pairs of) compositeinorganic layers, the fourth curve C4 represents a transmittance changeof a fourth composite inorganic multilayer including five (e.g., fivepairs of) composite inorganic layers, the fifth curve C5 represents atransmittance change of a fifth composite inorganic multilayer includingsix (e.g., six pairs of) composite inorganic layers, the sixth curve C6represents a transmittance change of a sixth composite inorganicmultilayer including seven (e.g., seven pairs of) composite inorganiclayers, and the seventh curve C7 represents a transmittance change of aseventh composite inorganic multilayer including eight (e.g., eightpairs of) composite inorganic layers.

The first composite inorganic multilayer has a structure in which twoTiO₂ inorganic layers and two Al₂O₃ inorganic layers are alternatelystacked on a SiN_(x) layer (e.g., the upper inorganic layer 752), thesecond composite inorganic multilayer has a structure in which threeTiO₂ inorganic layers and three Al₂O₃ inorganic layers are alternatelystacked on a SiN_(x) layer (e.g., the upper inorganic layer 752), thethird composite inorganic multilayer has a structure in which four TiO₂inorganic layers and four Al₂O₃ inorganic layers are alternately stackedon a SiN_(x) layer (e.g., the upper inorganic layer 752), the fourthcomposite inorganic multilayer has a structure in which five TiO₂inorganic layers and five Al₂O₃ inorganic layers are alternately stackedon a SiN_(x) layer (e.g., the upper inorganic layer 752), the fifthcomposite inorganic multilayer has a structure in which six TiO₂inorganic layers and six Al₂O₃ inorganic layers are alternately stackedon a SiN_(x) layer (e.g., the upper inorganic layer 752), the sixthcomposite inorganic multilayer has a structure in which seven TiO₂inorganic layers and seven Al₂O₃ inorganic layers are alternatelystacked on a SiN_(x) layer (e.g., the upper inorganic layer 752), andthe seventh composite inorganic multilayer has a structure in whicheight TiO₂ inorganic layers and eight Al₂O₃ inorganic layers arealternately stacked on a SiN_(x) layer (e.g., the upper inorganic layer752).

The transmittance of the second to seventh composite inorganicmultilayers is illustrated in FIG. 33A.

Referring to FIG. 33A, the transmittances of the second compositeinorganic multilayer in the wavelength range of about 405 nm and about450 nm are about 21.46% and about 79.50%, respectively, thetransmittances of the third composite inorganic multilayer in thewavelength range of about 405 nm and about 450 nm are about 14.87% andabout 79.86%, respectively, the transmittances of the fourth compositeinorganic multilayer in the wavelength range of about 405 nm and about450 nm are about 9.97% and about 80.16%, respectively, thetransmittances of the fifth composite inorganic multilayer in thewavelength range of about 405 nm and about 450 nm are about 7.72% andabout 79.48%, respectively, the transmittances of the sixth compositeinorganic multilayer in the wavelength range of about 405 nm and about450 nm are about 7.60% and about 79.61%, respectively, and thetransmittances of the seventh composite inorganic multilayer in thewavelength range of about 405 nm and about 450 nm are about 6.47% andabout 79.47% respectively.

Referring to FIG. 33A, a thickness of the second composite inorganicmultilayer is about 3650 Å, a thickness of the third composite inorganicmultilayer is about 4670 Å, a thickness of the fourth compositeinorganic multilayer is about 5740 Å, a thickness of the fifth compositeinorganic multilayer is about 6820 Å, a thickness of the sixth compositeinorganic multilayer is about 8130 Å, and a thickness of the seventhcomposite inorganic multilayer is about 9400 Å.

As illustrated in FIGS. 33B and 33C, in the wavelength range of UV ray(e.g., the wavelength range from about 320 nm to about 405 nm), thefourth to seventh composite inorganic multilayers have relatively lowtransmittance (e.g., a transmittance of about one-tenth (0.1) of amaximum transmittance or less or about 10% of a maximum transmittance orless). Accordingly, the sealing portion including one of the fourth toseventh composite inorganic layers may have an excellent UV-ray blockingability.

FIG. 34A is a table showing transmittance of a composite inorganicmultilayer including a TiO₂ layer and an inorganic layer having arefractive index less than that of TiO₂, FIG. 34B is a graphillustrating transmittance of each combination of FIG. 34A, FIG. 34C isa view enlarging a partial wavelength range of FIG. 34B, and FIG. 34D isa view enlarging another partial wavelength range of FIG. 34B.

In FIGS. 34B, 34C, and 34D, the X-axis represents the wavelength ofsunlight, and the Y-axis represents the transmittance (i.e., the lighttransmittance).

As illustrated in FIG. 34A, a first composite inorganic {circle around(1)} multilayer in an embodiment of the invention includes a pluralityof composite inorganic layers which include a first inorganic layer 1-01of TiO_(x) and a second inorganic layer 1-02 of SiN_(x) (n=1.882).

As illustrated in FIG. 34A, a second composite inorganic multilayer{circle around (2)} in an embodiment of the invention includes aplurality of composite inorganic layers which include a first inorganiclayer 1-01 of TiO₂ and a second inorganic layer 1-02 of SiN_(x)(n=1.833).

As illustrated in FIG. 34A, a third composite inorganic multilayer{circle around (3)} in an embodiment of the invention includes aplurality of composite inorganic layers which include a first inorganiclayer 1-01 of TiO₂ and a second inorganic layer 1-02 of AlO_(x)(n=1.677).

As illustrated in FIG. 34A, a fourth composite inorganic multilayer{circle around (4)} in an embodiment of the invention includes aplurality of composite inorganic layers which include a first inorganiclayer 1-01 of TiO₂ and a second inorganic layer 1-02 of AlO_(x)(n=1.627).

As illustrated in FIG. 34A, a fifth composite inorganic multilayer{circle around (5)} in an embodiment of the invention includes aplurality of composite inorganic layers which include a first inorganiclayer 1-01 of TiO₂ and a second inorganic layer 1-02 of SiO_(x)(n=1.487).

As illustrated in FIG. 34A, a sixth composite inorganic multilayer{circle around (6)} in an embodiment of the invention includes aplurality of composite inorganic layers which include a first inorganiclayer 1-01 of TiO₂ and a second inorganic layer 1-02 of SiO_(x)(n=1.463).

The first to sixth composite inorganic multilayers {circle around (1)}to {circle around (6)} described above may each include the same numberof composite inorganic layers. In an embodiment, each of the first tosixth composite inorganic multilayers {circle around (1)} to {circlearound (6)} may include seven composite inorganic layers, for example.In a further embodiment, the first composite inorganic multilayer{circle around (1)} may have a structure in which seven TiO₂ inorganiclayers and seven SiN_(x) (n=1.882) inorganic layers are alternatelystacked, the second composite inorganic multilayer {circle around (2)}may have a structure in which seven TiO₂ inorganic layers and sevenSiN_(x) (n=1.883) inorganic layers are alternately stacked, the thirdcomposite inorganic multilayer {circle around (3)} may have a structurein which seven TiO₂ inorganic layers and seven AlO_(x) (n=1.677)inorganic layers are alternately stacked, the fourth composite inorganicmultilayer {circle around (4)} may have a structure in which seven TiO₂inorganic layers and seven AlO_(x) (n=1.627) inorganic layers arealternately stacked, the fifth composite inorganic multilayer {circlearound (5)} may have a structure in which seven TiO₂ inorganic layersand seven SiO_(x) (n=1.487) inorganic layers are alternately stacked,and the sixth composite inorganic multilayer {circle around (6)} mayhave a structure in which seven TiO₂ inorganic layers and seven SiO_(x)(n=1.463) inorganic layers are alternately stacked,

As illustrated in FIGS. 34B and 34C, in the relatively low wavelengthrange (e.g., the wavelength range from about 320 nm to about 405 nm), asthe refractive index difference between the inorganic layers in thecomposite inorganic multilayer (or composite inorganic layer) increases,the transmittance of the composite inorganic multilayer (or compositeinorganic layer) decreases.

As illustrated in FIGS. 34B and 34D, in the relatively high wavelengthrange, as the refractive index difference between the inorganic layersin the composite inorganic multilayer (or composite inorganic layer)increases, the transmittance of the composite inorganic multilayer (orcomposite inorganic layer) increases.

Accordingly, the greater the refractive index difference between theinorganic layers included in the composite inorganic layer, the greaterthe UV-ray blocking effect.

FIG. 35 is a view illustrating sealing portions according to variousembodiments of the invention and thicknesses of related layers.

A first sealing portion {circle around (1)} may include an Al₂O₃auxiliary inorganic layer disposed on a SiN_(x) layer (e.g., the upperinorganic layer 752) and a first composite inorganic multilayer disposedon the Al₂O₃ auxiliary inorganic layer.

The first composite inorganic multilayer may include five compositeinorganic layers L1, L2, L3, L4, and L5. In an embodiment, the firstcomposite inorganic multilayer may include five TiO₂ inorganic layersand five Al₂O₃ inorganic layers that are alternately stacked on theSiN_(x) layer, for example.

In the first sealing portion {circle around (1)}, the SiN_(x) layer mayhave a thickness of about 5000 Å, the Al₂O₃ auxiliary inorganic layermay have a thickness of about 575 Å, the TiO₂ inorganic layer of thefirst composite inorganic layer L1 may have a thickness of about 189 Å,the Al₂O₃ inorganic layer of the first composite inorganic layer L1 mayhave a thickness of about 771 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 173 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 969 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 152 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 713 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 403 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 318 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 443 Å, andthe Al₂O₃ inorganic layer of the fifth composite inorganic layer L5 mayhave a thickness of about 1061 Å.

The total thickness of the TiO₂ inorganic layers is about 1360 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 4407 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 5767 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the firstsealing portion {circle around (1)} may be disposed beneath the organiclayer 755 or beneath the lower inorganic layer 751, and the firstcomposite inorganic multilayer of the first sealing portion {circlearound (1)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of thefirst composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, and thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4. In other words, the first to fifth compositeinorganic layers L1 to L5 may be disposed between the Al₂O₃ auxiliaryinorganic layer and the common electrode 613. In addition, between theTiO₂ inorganic layer and the Al₂O₃ inorganic layer in each of thecomposite inorganic layers, the Al₂O₃ inorganic layer is disposed closerto the common electrode 613.

A second sealing portion {circle around (2)} may include an Al₂O₃auxiliary inorganic layer disposed on a SiN_(x) layer (e.g., the upperinorganic layer 752) and a second composite inorganic multilayerdisposed on the Al₂O₃ auxiliary inorganic layer.

The second composite inorganic multilayer may include seven compositeinorganic layers L1, L2, L3, L4, L5, L6 and L7. In an embodiment, thesecond composite inorganic multilayer may include seven TiO₂ inorganiclayers and seven Al₂O₃ inorganic layers that are alternately stacked,for example.

In the second sealing portion {circle around (2)}, the SiN_(x) layer mayhave a thickness of about 5000 Å, the Al₂O₃ auxiliary inorganic layermay have a thickness of about 562 Å, the TiO₂ inorganic layer of thefirst composite inorganic layer L1 may have a thickness of about 74 Å,the Al₂O₃ inorganic layer of the first composite inorganic layer L1 mayhave a thickness of about 1470 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 87 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 733 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 248 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 645 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 202 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 1079 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 108 Å, theAl₂O₃ inorganic layer of the fifth composite inorganic layer L5 may havea thickness of about 747 Å, the TiO₂ inorganic layer of the sixthcomposite inorganic layer L6 may have a thickness of about 406 Å, theAl₂O₃ inorganic layer of the sixth composite inorganic layer L6 may havea thickness of about 295 Å, the TiO₂ inorganic layer of the seventhcomposite inorganic layer L7 may have a thickness of about 453 Å, andthe Al₂O₃ inorganic layer of the seventh composite inorganic layer L7may have a thickness of about 1046 Å.

The total thickness of the TiO₂ inorganic layers is about 1578 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 6577 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 8155 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the secondsealing portion {circle around (2)} may be disposed beneath the organiclayer 755 or beneath the lower inorganic layer 751, and the secondcomposite inorganic multilayer of the second sealing portion {circlearound (2)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of thesecond composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4, the sixth inorganic layer L6 may be disposed beneaththe fourth composite inorganic layer L5, and the seventh inorganic layerL7 may be disposed beneath the sixth composite inorganic layer L6. Inother words, the first to seventh composite inorganic layers L1 to L7may be disposed between the Al₂O₃ auxiliary inorganic layer and thecommon electrode 613. In addition, between the TiO₂ inorganic layer andthe Al₂O₃ inorganic layer in each of the composite inorganic layers, theAl₂O₃ inorganic layer is disposed closer to the common electrode 613.

A third sealing portion {circle around (3)} may include an Al₂O₃auxiliary inorganic layer disposed on a SiN_(x) layer (e.g., the upperinorganic layer 752) and a third composite inorganic multilayer disposedon the Al₂O₃ auxiliary inorganic layer.

The third composite inorganic multilayer may include five compositeinorganic layers L2, L3, L4, and L5. In an embodiment, the thirdcomposite inorganic multilayer may include five TiO₂ inorganic layersand five Al₂O₃ inorganic layers that are alternately stacked, forexample.

In the third sealing portion {circle around (3)}, the SiN_(x) layer mayhave a thickness of about 3000 Å, the Al₂O₃ auxiliary inorganic layermay have a thickness of about 575 Å, the TiO₂ inorganic layer of thefirst composite inorganic layer L1 may have a thickness of about 189 Å,the Al₂O₃ inorganic layer of the first composite inorganic layer L1 mayhave a thickness of about 771 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 173 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 969 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 152 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 713 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 403 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 318 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 443 Å, andthe Al₂O₃ inorganic layer of the fifth composite inorganic layer L5 mayhave a thickness of about 1061 Å.

The total thickness of the TiO₂ inorganic layers is about 1360 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 4407 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 5767 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the thirdsealing portion {circle around (3)} may be disposed beneath the organiclayer 755 or below the lower inorganic layer 751, and the thirdcomposite inorganic multilayer of the third sealing portion {circlearound (3)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of thethird composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, and thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4. In other words, the first to fifth compositeinorganic layers L1 to L5 may be disposed between the Al₂O₃ auxiliaryinorganic layer and the common electrode 613. In addition, between theTiO₂ inorganic layer and the Al₂O₃ inorganic layer in each of thecomposite inorganic layers, the Al₂O₃ inorganic layer is disposed closerto the common electrode 613.

A fourth sealing portion {circle around (4)} may include an Al₂O₃auxiliary inorganic layer disposed on a SiN_(x) layer (e.g., the upperinorganic layer 752) and a fourth composite inorganic multilayerdisposed on the Al₂O₃ auxiliary inorganic layer.

The fourth composite inorganic multilayer may include seven compositeinorganic layers L1, L2, L3, L4, L5, L6 and L7. In an embodiment, thefourth composite inorganic multilayer may include seven TiO₂ inorganiclayers and seven Al₂O₃ inorganic layers that are alternately stacked,for example.

In the fourth sealing portion {circle around (4)}, the SiN_(x) layer mayhave a thickness of about 3000 Å, the Al₂O₃ auxiliary inorganic layermay have a thickness of about 562 Å, the TiO₂ inorganic layer of thefirst composite inorganic layer L1 may have a thickness of about 74 Å,the Al₂O₃ inorganic layer of the first composite inorganic layer L1 mayhave a thickness of about 1470 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 87 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 733 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 248 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 645 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 202 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 1079 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 108 Å, theAl₂O₃ inorganic layer of the fifth composite inorganic layer L5 may havea thickness of about 747 Å, the TiO₂ inorganic layer of the sixthcomposite inorganic layer L6 may have a thickness of about 406 Å, theAl₂O₃ inorganic layer of the sixth composite inorganic layer L6 may havea thickness of about 295 Å, the TiO₂ inorganic layer of the seventhcomposite inorganic layer L7 may have a thickness of about 453 Å, andthe Al₂O₃ inorganic layer of the seventh composite inorganic layer L7may have a thickness of about 1046 Å.

The total thickness of the TiO₂ inorganic layers is about 1578 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 6577 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 8155 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the fourthsealing portion {circle around (4)} may be disposed beneath the organiclayer 755 or beneath the lower inorganic layer 751, and the fourthcomposite inorganic multilayer of the fourth sealing portion {circlearound (4)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of thefourth composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4, the sixth inorganic layer L6 may be disposed beneaththe fourth composite inorganic layer L5, and the seventh inorganic layerL7 may be disposed beneath the sixth composite inorganic layer L6. Inother words, the first to seventh composite inorganic layers L1 to L7may be disposed between the Al₂O₃ auxiliary inorganic layer and thecommon electrode 613. In addition, between the TiO₂ inorganic layer andthe Al₂O₃ inorganic layer in each of the composite inorganic layers, theAl₂O₃ inorganic layer is disposed closer to the common electrode 613.

A fifth sealing portion {circle around (5)} may include an Al₂O₃auxiliary inorganic layer disposed on a SiN_(x) layer (e.g., the upperinorganic layer 752) and a fifth composite inorganic multilayer disposedon the Al₂O₃ auxiliary inorganic layer.

The fifth composite inorganic multilayer may include five compositeinorganic layers L1, L2, L3, L4, and L5. In an embodiment, the fifthcomposite inorganic multilayer may include five TiO₂ inorganic layersand five Al₂O₃ inorganic layers that are alternately stacked, forexample.

In the fifth sealing portion {circle around (5)}, the SiN_(x) layer mayhave a thickness of about 1000 Å, the Al₂O₃ auxiliary inorganic layermay have a thickness of about 117 Å, the TiO₂ inorganic layer of thefirst composite inorganic layer L1 may have a thickness of about 164 Å,the Al₂O₃ inorganic layer of the first composite inorganic layer L1 mayhave a thickness of about 709 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 250 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 730 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 234 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 643 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 403 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 362 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 409 Å, andthe Al₂O₃ inorganic layer of the fifth composite inorganic layer L5 mayhave a thickness of about 1107 Å.

The total thickness of the TiO₂ inorganic layers is about 1460 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 3668 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 5128 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the fifthsealing portion {circle around (5)} may be disposed beneath the organiclayer 755 or below the lower inorganic layer 751, and the fifthcomposite inorganic multilayer of the fifth sealing portion {circlearound (5)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of thefifth composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, and thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4. In other words, the first to fifth compositeinorganic layers L1 to L5 may be disposed between the Al₂O₃ auxiliaryinorganic layer and the common electrode 613. In addition, between theTiO₂ inorganic layer and the Al₂O₃ inorganic layer in each of thecomposite inorganic layers, the Al₂O₃ inorganic layer is disposed closerto the common electrode 613.

A sixth sealing portion {circle around (6)} may include an Al₂O₃auxiliary inorganic layer disposed on a SiN_(x) layer (e.g., the upperinorganic layer 752) and a sixth composite inorganic multilayer disposedon the Al₂O₃ auxiliary inorganic layer.

The sixth composite inorganic multilayer may include seven compositeinorganic layers L2, L3, L4, L5, L6 and L7. In an embodiment, the sixthcomposite inorganic multilayer may include seven TiO₂ inorganic layersand seven Al₂O₃ inorganic layers that are alternately stacked, forexample.

In the sixth sealing portion {circle around (6)}, the SiN_(x) layer mayhave a thickness of about 1000 Å, the Al₂O₃ auxiliary inorganic layermay have a thickness of about 117 Å, the TiO₂ inorganic layer of thefirst composite inorganic layer L1 may have a thickness of about 35 Å,the Al₂O₃ inorganic layer of the first composite inorganic layer L1 mayhave a thickness of about 1040 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 206 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 545 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 371 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 531 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 253 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 962 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 153 Å, theAl₂O₃ inorganic layer of the fifth composite inorganic layer L5 may havea thickness of about 667 Å, the TiO₂ inorganic layer of the sixthcomposite inorganic layer L6 may have a thickness of about 459 Å, theAl₂O₃ inorganic layer of the sixth composite inorganic layer L6 may havea thickness of about 259 Å, the TiO₂ inorganic layer of the seventhcomposite inorganic layer L7 may have a thickness of about 470 Å, andthe Al₂O₃ inorganic layer of the seventh composite inorganic layer L7may have a thickness of about 1047 Å.

The total thickness of the TiO₂ inorganic layers is about 1947 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 5168 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 7115 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the sixthsealing portion {circle around (6)} may be disposed beneath the organiclayer 755 or beneath the lower inorganic layer 751, and the sixthcomposite inorganic multilayer of the sixth sealing portion {circlearound (6)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of thesixth composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4, the sixth inorganic layer L6 may be disposed beneaththe fourth composite inorganic layer L5, and the seventh inorganic layerL7 may be disposed beneath the sixth composite inorganic layer L6. Inother words, the first to seventh composite inorganic layers L1 to L7may be disposed between the Al₂O₃ auxiliary inorganic layer and thecommon electrode 613. In addition, between the TiO₂ inorganic layer andthe Al₂O₃ inorganic layer in each of the composite inorganic layers, theAl₂O₃ inorganic layer is disposed closer to the common electrode 613.

A seventh sealing portion {circle around (7)} may include an Al₂O₃auxiliary inorganic layer and a seventh composite inorganic multilayerdisposed on the Al₂O₃ auxiliary inorganic layer. In an embodiment, theAl₂O₃ auxiliary inorganic layer of the seventh sealing portion {circlearound (7)} may be disposed on the organic layer 755.

The seventh composite inorganic multilayer may include five compositeinorganic layers L1, L2, L3, L4, and L5. In an embodiment, the seventhcomposite inorganic multilayer may include five TiO₂ inorganic layersand five Al₂O₃ inorganic layers that are alternately stacked, forexample.

In the seventh sealing portion {circle around (7)}, the SiN_(x) layermay have a thickness of about 0 Å, the Al₂O₃ auxiliary inorganic layermay have a thickness of about 117 Å, the TiO₂ inorganic layer of thefirst composite inorganic layer L1 may have a thickness of about 164 Å,the Al₂O₃ inorganic layer of the first composite inorganic layer L1 mayhave a thickness of about 709 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 250 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 730 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 234 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 643 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 403 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 362 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 409 Å, andthe Al₂O₃ inorganic layer of the fifth composite inorganic layer L5 mayhave a thickness of about 1107 Å.

The total thickness of the TiO₂ inorganic layers is about 1460 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 3668 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 5128 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the seventhsealing portion {circle around (7)} may be disposed beneath the organiclayer 755 or beneath the lower inorganic layer 751, and the seventhcomposite inorganic multilayer of the seventh sealing portion {circlearound (7)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of theseventh composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, and thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4. In other words, the first to fifth compositeinorganic layers L1 to L5 may be disposed between the Al₂O₃ auxiliaryinorganic layer and the common electrode 613. In addition, between theTiO₂ inorganic layer and the Al₂O₃ inorganic layer in each of thecomposite inorganic layers, the Al₂O₃ inorganic layer is disposed closerto the common electrode 613.

An eighth sealing portion {circle around (8)} may include an Al₂O₃auxiliary inorganic layer and an eighth composite inorganic multilayerdisposed on the Al₂O₃ auxiliary inorganic layer. In an embodiment, theAl₂O₃ auxiliary inorganic layer of the eighth sealing portion {circlearound (8)} may be disposed on the organic layer 755.

The eighth composite inorganic multilayer may include seven compositeinorganic layers L1, L2, L3, L4, L5, L6 and L7. In an embodiment, theeighth composite inorganic multilayer may include seven TiO₂ inorganiclayers and seven Al₂O₃ inorganic layers that are alternately stacked,for example.

In the eighth sealing portion {circle around (8)}, the SiN_(x) layer mayhave a thickness of about 0 Å, the Al₂O₃ auxiliary inorganic layer mayhave a thickness of about 117 Å, the TiO₂ inorganic layer of the firstcomposite inorganic layer L1 may have a thickness of about 35 Å, theAl₂O₃ inorganic layer of the first composite inorganic layer L1 may havea thickness of about 1040 Å, the TiO₂ inorganic layer of the secondcomposite inorganic layer L2 may have a thickness of about 206 Å, theAl₂O₃ inorganic layer of the second composite inorganic layer L2 mayhave a thickness of about 545 Å, the TiO₂ inorganic layer of the thirdcomposite inorganic layer L3 may have a thickness of about 371 Å, theAl₂O₃ inorganic layer of the third composite inorganic layer L3 may havea thickness of about 531 Å, the TiO₂ inorganic layer of the fourthcomposite inorganic layer L4 may have a thickness of about 253 Å, theAl₂O₃ inorganic layer of the fourth composite inorganic layer L4 mayhave a thickness of about 962 Å, the TiO₂ inorganic layer of the fifthcomposite inorganic layer L5 may have a thickness of about 153 Å, theAl₂O₃ inorganic layer of the fifth composite inorganic layer L5 may havea thickness of about 667 Å, the TiO₂ inorganic layer of the sixthcomposite inorganic layer L6 may have a thickness of about 459 Å, theAl₂O₃ inorganic layer of the sixth composite inorganic layer L6 may havea thickness of about 259 Å, the TiO₂ inorganic layer of the seventhcomposite inorganic layer L7 may have a thickness of about 470 Å, andthe Al₂O₃ inorganic layer of the seventh composite inorganic layer L7may have a thickness of about 1047 Å.

The total thickness of the TiO₂ inorganic layers is about 1947 Å, thetotal thickness of the Al₂O₃ inorganic layers including the Al₂O₃auxiliary inorganic layer is about 5168 Å, and the total thickness ofthe Al₂O₃ auxiliary inorganic layer, the TiO₂ inorganic layers and theAl₂O₃ inorganic layers is about 7115 Å.

In an embodiment, the Al₂O₃ auxiliary inorganic layer of the eighthsealing portion {circle around (8)} may be disposed beneath the organiclayer 755 or beneath the lower inorganic layer 751, and the eighthcomposite inorganic multilayer of the eighth sealing portion {circlearound (8)} may be disposed beneath the Al₂O₃ auxiliary inorganic layer.In such an embodiment, the first composite inorganic layer L1 of theeighth composite inorganic multilayer may be disposed beneath the Al₂O₃auxiliary inorganic layer, the second composite inorganic layer L2 maybe disposed beneath the first composite inorganic layer L1, the thirdcomposite inorganic layer L3 may be disposed beneath the secondcomposite inorganic layer L2, the fourth composite inorganic layer L4may be disposed beneath the third composite inorganic layer L3, thefifth inorganic layer L5 may be disposed beneath the fourth compositeinorganic layer L4, the sixth inorganic layer L6 may be disposed beneaththe fourth composite inorganic layer L5, and the seventh inorganic layerL7 may be disposed beneath the sixth composite inorganic layer L6. Inother words, the first to seventh composite inorganic layers L1 to L7may be disposed between the Al₂O₃ auxiliary inorganic layer and thecommon electrode 613. In addition, between the TiO₂ inorganic layer andthe Al₂O₃ inorganic layer in each of the composite inorganic layers, theAl₂O₃ inorganic layer is disposed closer to the common electrode 613.

In an embodiment according to the invention, the sealing portion 750 mayalso be applied to a flexible display device.

FIG. 36 is a detailed configuration view illustrating another embodimentof a display device according to the invention.

A display device in another embodiment of the invention may include asubstrate 100, a pixel circuit unit 200, a light emitting diode (“LED”),a sealing portion 750, and a polarizing plate 250, as illustrated inFIG. 36 .

The LED may include at least one of an HIL 661 and an HTL 662, at leastone of an ETL 664 and an EIL 665, and a light emitting layer 512, asillustrated in FIG. 36 .

The at least one of the HIL 661 and the HTL 662, the at least one of theETL 664 and the EIL 665, and the light emitting layer 512 may bedisposed along a Z-axis direction between the pixel electrode PE and thecommon electrode 613.

The at least one of the HIL 661 and the HTL 662 may be disposed betweenthe pixel electrode PE and the light emitting layer 512. In such anembodiment, the HIL 661 may be disposed between the pixel electrode PEand the HTL 662, and the HTL 662 may be disposed between the HIL 661 andthe light emitting layer 512.

At least one of the ETL 664 and the EIL 665 may be disposed between thelight emitting layer 512 and the common electrode 613. In an embodiment,the ETL 664 may be disposed between the light emitting layer 512 and theEIL 665, and the EIL 665 may be disposed between the ETL 664 and thecommon electrode 613, for example.

In such an embodiment, the light emitting layer 512 may include aquantum dot material. A core of the quantum dot may include one of groupII-VI compounds, group III-V compounds, group IV-VI compounds, group IVelements, group IV compounds, and any combinations thereof.

The group II-VI compound may include one of binary compounds of CdSe,CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and anycombinations thereof, ternary compounds of AgInS, CuInS, CdSeS, CdSeTe,CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe,CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, andany combinations thereof, and quaternary compounds of HgZnTeS, CdZnSeS,CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe,HgZnSTe, and any combinations thereof.

The group III-V compound may include one of binary compounds of GaN,GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and anycombinations thereof, ternary compounds of GaNP, GaNAs, GaNSb, GaPAs,GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb,InPAs, InPSb, GaAlNP, and any combinations thereof, and quaternarycompounds of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs,GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb,and any combinations thereof.

The group IV-VI compound may include one of binary compounds of SnS,SnSe, SnTe, PbS, PbSe, PbTe, and any combinations thereof, ternarycompounds of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe,SnPbTe, and any combinations thereof, and quaternary compounds ofSnPbSSe, SnPbSeTe, SnPbSTe, and any combinations thereof. The group IVelement may include one of Si, Ge, and any combinations thereof. Thegroup IV compound may be a binary compound of SiC, SiGe, and anycombinations thereof.

In such an embodiment, the binary compound, the ternary compound, or thequaternary compound may be provided in particles at uniformconcentrations, or may be provided in the same particle while theconcentration distribution is partially divided into different states.In addition, the quantum dots may have a core/shell structure where onequantum dot surrounds another quantum dot. An interface between the coreand the shell may have a concentration gradient in which a concentrationof elements provided in the shell decreases toward the center.

In an embodiment, the quantum dots may have a core-shell structure thatincludes a core including the aforementioned nanocrystals and a shellsurrounding the core. The shell of the quantum dot may be a protectivelayer for maintaining semiconductor properties by preventing chemicaldenaturation of the core and/or a charging layer for impartingelectrophoretic properties to the quantum dots. The shell may be asingle layer or multiple layers. The interface between the core and theshell may have a concentration gradient in which the concentration ofelements provided in the shell decreases toward the center. Examples ofthe shell of the quantum dots may include metal or non-metal oxides,semiconductor compounds, or combinations thereof.

In an embodiment, examples of the metal or non-metal oxide may includebinary compounds such as SiO₂, Al₂O₃, TiO₂, ZnO, MnO, Mn₂O₃, Mn₃O₄, CuO,FeO, Fe₂O₃, Fe₃O₄, CoO, Co₃O₄, and NiO, or ternary compounds such asMgAl₂O₄, CoFe₂O₄, NiFe₂O₄, and CoMn₂O₄, but the invention is not limitedthereto.

In addition, examples of the semiconductor compound may include CdS,CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe,HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, but the invention isnot limited thereto.

The quantum dot may have a full width of half maximum (“FWHM”) of alight emission wavelength spectrum of about 45 nm or less, preferablyabout 40 nm or less, and more preferably about 30 nm or less, and mayimprove color purity or color reproducibility in such a range. Inaddition, since light emitted through such quantum dots is emitted inall directions, a wide viewing angle may be improved.

In an embodiment, a shape of the quantum dot is not particularlylimited, and the quantum dot may have various shapes, and specifically,spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes,nanowires, nanofibers, and nanoplate-like particles may be used.

A color of light emitted from the light emitting layer may be adjustedaccording to the particle size of the quantum dot. Accordingly, thequantum dots may have various emission colors such as blue, red, andgreen.

When the particles of quantum dots have a small diameter, a wavelengthof the emitted light is shortened to generate a blue-based light, andwhen the size of the particles of quantum dots is increased, thewavelength of the emitted light is lengthened to generate a red-basedlight, for example. In an embodiment, the particles of quantum dotshaving a diameter of about 10 nm may emit a red light, the particles ofquantum dots having a diameter of about 7 nm may emit a green light, andthe particles of quantum dots having a diameter of about 5 nm may emit ablue light, for example.

The light emitting layer of a red pixel may include the aforementionedquantum dots having a diameter of about 10 nm, the light emitting layerof a green pixel may include the aforementioned quantum dots having adiameter of about 7 nm, and the light emitting layer of a blue pixel mayinclude the aforementioned quantum dots having a diameter of about 5 nm.

Although not illustrated, the HIL 661, the HTL 662, the ETL 664, and theEIL 665 of adjacent pixels may be connected to each other. In otherwords, the HILs 661 of adjacent pixels may be unitarily provided, theHTLs 662 of adjacent pixels may be unitarily provided, the ETLs 664 ofadjacent pixels may be unitarily provided, and the EILs 665 of adjacentpixels may be unitarily provided. In such an embodiment, the HIL 661,the HTL 662, the ETL 664, and the EIL 665 may be disposed on the lightblocking layer 190 as well as the light emission area. In a furtherembodiment, the HIL 661, the HTL 662, the ETL 664, and the EIL 665 maybe disposed between the light blocking layer 190 and the commonelectrode 613.

A polarizing plate 250 may be disposed on the sealing portion 750. Thepolarizing plate 250 may substantially prevent reflection of externallight. In an embodiment, as a light incident to the inside of thedisplay device 5555 (refer to FIG. 1 ) may be reflected by a metalmaterial inside the display device 5555 and emitted to the outside ofthe display device 5555, the polarizing plate 250 polarizes the lightincident from the outside so that the light reflected by the metalmaterial may not be emitted to the outside of the display device 5555,for example. That is, the light polarized by the polarizing plate 250and incident to the inside of the display device 5555 may be reflectedby the metal material, and such a reflected light may not pass throughthe polarizing plate 250. The polarizing plate 250 may also be disposedon the sealing portion 750 of FIG. 5 described above.

The substrate 100 and the pixel circuit unit 200 of FIG. 36 aresubstantially the same as the substrate 100 and the pixel circuit unit200 of FIG. 5 described above, respectively.

FIG. 37 is a detailed configuration view illustrating another embodimentof a display device according to the invention.

As illustrated in FIG. 37 , a display device in another embodiment ofthe invention includes a substrate 100, a pixel circuit unit 200, anLED, a sealing portion 750, a first light blocking layer 191, aplanarization layer 188, a second light blocking layer 192, a firstcolor conversion layer 591, a second color conversion layer 592, a lighttransmission layer 590, a first capping layer 601, a second cappinglayer 602, a third light blocking layer 193, a first color filter layer581, a second color filter layer 582, a third color filter layer 583,and an opposing substrate 800.

The light emitting diode LED may include a pixel electrode PE (refer toFIGS. 5 and 6 ), a plurality of light emitting layers 551, 552, and 553,a plurality of charge generation layers 651 and 652, and a commonelectrode 613.

Since the pixel electrode PE of FIG. 37 is substantially the same as thepixel electrode PE of FIG. 5 described above, reference will be made toFIG. 5 and the related descriptions for the description of the pixelelectrode PE of FIG. 37 .

The plurality of light emitting layers 551, 552, and 553 may be disposedon the pixel electrode PE and the light blocking layer 190. In anembodiment, the plurality of light emitting layers 551, 552, and 553 isdisposed between the pixel electrode PE and the common electrode 613,and between the light blocking layer 190 and the common electrode 613 aswell, for example.

The plurality of light emitting layers 551, 552, and 553 may be disposedalong the Z-axis direction. The plurality of light emitting layers 551,552, and 553 may all be blue light emitting layers that emit blue light.Each of the plurality of light emitting layers 551, 552, and 553 mayinclude a low molecular weight organic material or a high molecularweight organic material. Although not illustrated, at least one of anHIL and an HTL may be further disposed between the pixel electrode PEand the light emitting layer 551, and at least one of an ETL and an EILmay be further disposed between the light emitting layer 553 and thecommon electrode 613.

The first light emitting layer 551 may be disposed on the pixelelectrode PE and the light blocking layer 190, the second light emittinglayer 552 may be disposed on the first light emitting layer 551, and thethird light emitting layer 553 may be disposed on the second lightemitting layer 552. In such an embodiment, each of the light emittinglayers 551, 552, and 553 has a continuous shape without being separatedfor each of the pixels PX1, PX2, and PX3. In an embodiment, the firstlight emitting layer 551 may be disposed on the pixel electrode PE andthe light blocking layer 190 to overlap a front surface of the substrate100, the second light emitting layer 552 may be disposed on the firstlight emitting layer 551 to overlap the front surface of the substrate100, and the third light emitting layer 553 may be disposed on thesecond light emitting layer 552 to overlap the front surface of thesubstrate 100, for example. In an embodiment, the plurality of lightemitting layers may include two or more light emitting layers. In analternative embodiment, only one light emitting layer may be disposed inplace of the plurality of light emitting layers.

The respective charge generation layers 651 and 652 may be disposedbetween adjacent light emitting layers 551, 552 and 553 along the Z-axisdirection. In an embodiment, the first charge generation layer 651 maybe disposed between the first light emitting layer 551 and the secondlight emitting layer 552, and the second charge generation layer 652 maybe disposed between the second light emitting layer 552 and the thirdlight emitting layer 553, for example. In such an embodiment, each ofthe charge generation layers 651 and 652 may have a continuous shapewithout being separated for each of the pixels PX1, PX2, and PX3. In anembodiment, the first charge generation layer 651 may be disposed on thefirst light emitting layer 551 to overlap the front surface of thesubstrate 100, and the second charge generation layer 652 may bedisposed on the second light emitting layer 552 to overlap the frontsurface of the substrate 100, for example. At least one of the chargegeneration layers 651 and 652 may be PN junction charge generationlayers in which an N-type charge generation layer and a P-type chargegeneration layer are junctioned. The charge generation layer maygenerate charges or separate holes from electrons to inject charges intorespective light emitting layers. In an embodiment, when only one lightemitting layer is disposed, the charge generation layers 651 and 652 maybe omitted.

The sealing portion 750 may be disposed on an uppermost layer of theplurality of light emitting layers 551, 552, and 553, for example, thethird light emitting layer 553. Since the sealing portion 750 of FIG. 37is substantially the same as the sealing portion 750 of FIG. 5 describedabove, reference will be made to FIG. 5 and related descriptions for thedescription of the sealing portion 750 of FIG. 37 .

The first light blocking layer 191 may be disposed on the sealingportion 750. In an embodiment, the first light blocking layer 191 may bedisposed on the sealing portion 750, corresponding to the light blockinglayer 190, for example. The first light blocking layer 191 overlaps thelight blocking layer 190. In other words, the first light blocking layer191 may be disposed between the light blocking layer 190 and the thirdlight blocking layer 193. The first light blocking layer 191 may includea material substantially the same as a material included in the lightblocking layer 190.

The planarization layer 188 may be disposed on the first light blockinglayer 191 and the sealing portion 750. In an embodiment, theplanarization layer 188 may be disposed between the first light blockinglayer 191 and the third light blocking layer 193, and between thesealing portion 750 and the second capping layer 602, respectively, forexample. The planarization layer 188 may include a materialsubstantially the same as a material included in the planarization layer180 described above.

The first color filter layer 581, the second color filter layer 582 andthe third color filter layer 583 are disposed on the opposing substrate800. Each of the first color filter layer 581, the second color filterlayer 582, and the third color filter layer 583 may include a resin. Insuch an embodiment, the first color filter layer 581, the second colorfilter layer 582, and the third color filter layer 583 may include dyesof different colors. In an embodiment, the first color filter layer 581may be a red color filter layer including a red dye, the second colorfilter layer 582 may be a green color filter layer including a greendye, and the third color filter layer 583 may be a blue color filterlayer including a blue dye, for example.

The opposing substrate 800 may include a material substantially the sameas a material included in the base layer 110 or the first layer 111described above.

The first color filter layer 581 may be disposed corresponding to afirst pixel electrode PE1 and/or a first light emission area 901 of afirst pixel PX1, the second color filter layer 582 may be disposedcorresponding to a second pixel electrode PE2 and/or a second lightemission area 902 of a second pixel PX2, and the third color filterlayer 583 may be disposed corresponding to a third pixel electrode PE3and/or a third light emission area 903 of a third pixel PX3. In such anembodiment, the third color filter layer 583 may be further disposedbetween the first color filter layer 581 and the second color filterlayer 582 which are adjacent to each other.

In an embodiment, the first pixel PX1 may be a red pixel, the secondpixel PX2 may be a green pixel, and the third pixel PX3 may be a bluepixel, for example. In such an embodiment, the first color filter layer581 may be a red color filter layer, the second color filter layer 582may be a green color filter layer, and the third color filter layer 583may be a blue color filter layer, for example.

The second light blocking layer 192 may be disposed on the third colorfilter layer 583. In such an embodiment, the second light blocking layer192 may be disposed on the third color filter layer 583 at an area otherthan the third light emission area 903. In an embodiment, an edge of thefirst color filter layer 581 and an edge of the second color filterlayer 582 may be disposed on the second light blocking layer 192. Thesecond light blocking layer 192 may include a material substantially thesame as a material included in the light blocking layer 190 describedabove.

The first capping layer 601 may be disposed on the first color filterlayer 581, the second color filter layer 582, the third color filterlayer 583, and the second light blocking layer 192. The first cappinglayer 601 may include a low refractive index inorganic material. In anembodiment, the first capping layer 601 may include, for example, atleast one of SiN_(x), SiO_(x), SiON_(x), and SiOC.

The first color conversion layer 591, the second color conversion layer592, and the light transmission layer 590 may be disposed on the firstcapping layer 601. In such an embodiment, the first color conversionlayer 591 may be disposed corresponding to the first pixel electrode PE1and/or the first light emission area 901 of the first pixel PX1, thesecond color conversion layer 592 may be disposed corresponding to thesecond pixel electrode PE2 and/or the second light emission area 902 ofthe second pixel PX2, and the light transmission layer 590 may bedisposed corresponding to the third pixel electrode PE3 and/or the thirdlight emission area 903 of the third pixel PX3. In other words, thefirst color conversion layer 591 may be disposed between the first lightemission area 901 and the first color filter layer 581, the second colorconversion layer 592 may be disposed between the second light emissionarea 902 and the second color filter layer 582, and the lighttransmission layer 590 may be disposed between the third light emissionarea 903 and the third color filter layer 583.

The first color conversion layer 591 and the second color conversionlayer 592 may include the quantum dot materials described above,respectively. In an embodiment, the first color conversion layer 591 mayinclude a quantum dot material for emitting a red light, and the secondcolor conversion layer 592 may include a quantum dot material foremitting a green light, for example. To this end, in an embodiment, thefirst color conversion layer 591 may include quantum dots 591 a having adiameter of about 10 nm, and the second color conversion layer 592 mayinclude quantum dots 592 a having a diameter of about 7 nm, for example.In an embodiment, at least one of the first color conversion layer 591and the second color conversion layer 592 may further include a lightscattering agent 430. The light scattering agent 430 may includetitanium dioxide (TiO₂).

The light transmission layer 590 may include, for example, a transparentphotoresist. In an embodiment, the light transmission layer 590 mayfurther include the light scattering agent 430 described above. Thelight scattering agent 430 may include titanium dioxide (TiO₂).

A blue light that is incident to the first color conversion layer 591,among the blue lights from the plurality of light emitting layers 551,552, and 553, may be converted into a red light by the first colorconversion layer 591, and a blue light that is incident to the secondcolor conversion layer 592, among the blue lights from the plurality oflight emitting layers 551, 552, and 553, may be converted into a greenlight by the second color conversion layer 592. In an embodiment, a bluelight that is incident to the light transmission layer 590, among theblue lights from the plurality of light emitting layers 551, 552, and553, passes through the light transmission layer 590 without substantialcolor change.

The red light from the first color conversion layer 591 may pass throughthe first color filter layer 581 (for example, a red color filter layer)to be emitted to the outside, the green light from the second colorconversion layer 592 may pass through the second color filter layer 582(for example, a green color filter layer) to be emitted to the outside,and the blue light from the light transmission layer 590 may passthrough the third color filter layer 583 (for example, a blue colorfilter layer) to be emitted to the outside.

The second capping layer 602 may be disposed on the first colorconversion layer 591, the second color conversion layer 592, the lighttransmission layer 590, and the first capping layer 601. In such anembodiment, the first color conversion layer 591, the second colorconversion layer 592, and the light transmission layer 590 may besurrounded by the first capping layer 601 and the second capping layer602. In such an embodiment, the second capping layer 602 surrounding thefirst color conversion layer 591, the second capping layer 602surrounding the second color conversion layer 592, and the secondcapping layer 602 surrounding the light transmission layer 590 areseparated from each other, without being connected to each other. Thesecond capping layer 602 may include a low refractive index inorganicmaterial. In an embodiment, the second capping layer 602 may include atleast one of SiN_(x), SiO_(x), SiON_(x), and SiOC, for example. When thesecond capping layer 602 and the first capping layer 601 include asubstantially same material, an interface between the second cappinglayer 602 and the first capping layer 601 may not exist.

The third light blocking layer 193 may be disposed on the first cappinglayer 601, corresponding to the first light blocking layer 191. In suchan embodiment, the third light blocking layer 193 may be disposedbetween the first color conversion layer 591 and the second colorconversion layer 592 which are adjacent to each other. In addition, thethird light blocking layer 193 may be disposed between the second colorconversion layer 592 and the light transmission layer 590 which areadjacent to each other. In addition, the third light blocking layer 193may be disposed between the light transmission layer 590 and the firstcolor conversion layer 591 which are adjacent to each other. In otherwords, the third light blocking layer 193 may be disposed between thesecond capping layers 602 which are adjacent to each other. The thirdlight blocking layer 193 may include a material substantially the sameas a material included in the light blocking layer 190 described above.

In an embodiment, as illustrated in FIG. 37 , respective edges of thelight blocking layer 190, the first light emitting layer 551, the secondlight emitting layer 552, the third light emitting layer 553, the firstcharge generation layer 651, the second charge generation layer 652, thecommon electrode 613, the first color conversion layer 591, the secondcolor conversion layer 592, the light transmission layer 590, the firstcapping layer 601, and the second capping layer 602 may have a roundshape.

The display device according to the invention contributes to anexcellent UV blocking ability and to improving adhesion betweeninorganic layers, thus contributing to technology improvement in thefield of display devices.

As set forth hereinabove, a display device in embodiments of theinvention may provide the following effects.

First, a sealing portion including a composite inorganic layer inembodiments of the invention may have an excellent UV-ray blockingability.

Second, adhesion between inorganic layers in the composite inorganiclayer in embodiments of the invention may be improved.

Third, a coupling force between the sealing portion and the substratemay be improved.

While the invention has been illustrated and described with reference tothe embodiments thereof, it will be apparent to those of ordinary skillin the art that various changes in form and detail may be made theretowithout departing from the spirit and scope of the inventive concept.

What is claimed is:
 1. A display device comprising: a substrate; aswitching element on the substrate; a pixel electrode disposed on theswitching element and connected to the switching element; a lightemitting layer on the pixel electrode; a common electrode on the lightemitting layer; and a sealing portion on the common electrode, thesealing portion comprising: an organic layer; and at least one firstcomposite inorganic layer disposed between the organic layer and thecommon electrode, the at least one first composite inorganic layercomprising: a first inorganic layer between the common electrode and theorganic layer; and a second inorganic layer between the first inorganiclayer and the organic layer, wherein a refractive index of the firstinorganic layer and a refractive index of the second inorganic layer aredifferent from each other, and the first inorganic layer and the secondinorganic layer contact each other, and a difference between therefractive index of the first inorganic layer and the refractive indexof the second inorganic layer is substantially equal to or more thanabout 0.4 so that the at least one first composite inorganic layer has atransmittance of 10% of a maximum transmittance or less of ultra-violetlight.
 2. The display device of claim 1, wherein the refractive index ofthe first inorganic layer is higher than the refractive index of thesecond inorganic layer.
 3. The display device of claim 1, wherein thesecond inorganic layer included in one of adjacent ones of the at leastone first composite inorganic layers and the first inorganic layerincluded in a remaining one of the adjacent ones of the at least onefirst composite inorganic layers face each other, and a refractive indexof the second inorganic layer included in the one of the adjacent onesof the at least one first composite inorganic layers and a refractiveindex of the first inorganic layer included in the remaining one of theadjacent ones of the at least one first composite inorganic layers aredifferent from each other.
 4. The display device of claim 3, wherein thesecond inorganic layer included in the one of the adjacent ones of theat least one first composite inorganic layers and the first inorganiclayer included in the remaining one of the adjacent ones of the at leastone first composite inorganic layers contact each other.
 5. The displaydevice of claim 3, wherein the second inorganic layer included in theone of the adjacent ones of the at least one first composite inorganiclayers and the second inorganic layer included in the remaining one ofthe adjacent ones of the at least one first composite inorganic layershave a substantially equal refractive index.
 6. The display device ofclaim 1, wherein the first inorganic layer and the second inorganiclayer comprise at least one of TiO₂, SiN_(x), AlO_(x), Al₂O₃ andSiO_(x).
 7. The display device of claim 1, wherein one of the firstinorganic layer and the second inorganic layer comprises TiO₂, and aremaining one of the first inorganic layer and the second inorganiclayer comprises Al₂O₃.
 8. The display device of claim 7, wherein the atleast one first composite inorganic layer comprises at least five firstcomposite inorganic layers.
 9. The display device of claim 8, wherein atotal thickness of the at least five first composite inorganic layers isgreater than about 0.5 micrometer and less than about 1 micrometer. 10.The display device of claim 1, further comprising a first auxiliaryinorganic layer between the at least one first composite inorganic layerand the organic layer.
 11. The display device of claim 10, wherein arefractive index of the first auxiliary inorganic layer is substantiallyequal to the refractive index of the first inorganic layer.
 12. Thedisplay device of claim 1, further comprising at least one secondcomposite inorganic layer disposed to oppose the at least one firstcomposite inorganic layer with the organic layer interposedtherebetween.
 13. The display device of claim 12, wherein the at leastone second composite inorganic layer comprises: a first inorganic layeron the organic layer; and a second inorganic layer on the firstinorganic layer of the at least one second composite inorganic layer.14. The display device of claim 13, wherein a refractive index of thefirst inorganic layer of the at least one second composite inorganiclayer and a refractive index of the second inorganic layer of the atleast one second composite inorganic layer are different from eachother.
 15. The display device of claim 14, wherein the first inorganiclayer of the at least one second composite inorganic layer and the firstinorganic layer of the at least one first composite inorganic layer havea substantially equal refractive index, and the second inorganic layerof the at least one second composite inorganic layer and the secondinorganic layer of the at least one first composite inorganic layer havea substantially equal refractive index.
 16. The display device of claim13, wherein the first inorganic layer of the at least one secondcomposite inorganic layer and the second inorganic layer of the at leastone second composite inorganic layer contact each other.
 17. The displaydevice of claim 13, wherein a difference between the refractive index ofthe first inorganic layer included in the at least one second compositeinorganic layer and the refractive index of the second inorganic layerincluded in the at least one second composite inorganic layer issubstantially equal to or more than about 0.4.
 18. The display device ofclaim 13, further comprising a second auxiliary inorganic layer betweenthe at least one second composite inorganic layer and the organic layer.19. The display device of claim 18, wherein a refractive index of thesecond auxiliary inorganic layer is substantially equal to a refractiveindex of the second inorganic layer included in the at least one secondcomposite inorganic layer.
 20. The display device of claim 1, whereinthe sealing portion comprises at least one of: a lower inorganic layerbetween the organic layer and the at least one first composite inorganiclayer; and an upper inorganic layer on the organic layer.
 21. Thedisplay device of claim 1, further comprising a protective layer betweenthe common electrode and the at least one first composite inorganiclayer.
 22. The display device of claim 21, wherein the protective layercomprises: a capping layer on the common electrode; and a metal layer onthe capping layer.
 23. The display device of claim 22, wherein thecapping layer comprises an organic material, and the metal layercomprises LiF.
 24. The display device of claim 1, wherein an interfacebetween the first inorganic layer and the second inorganic layer has afirst concavo-convex pattern.
 25. The display device of claim 24,wherein a surface of the second inorganic layer facing the interface hasa second concavo-convex pattern.
 26. The display device of claim 25,wherein an arrangement direction of convex portions included in thefirst concavo-convex pattern crosses an arrangement direction of convexportions included in the second concavo-convex pattern.
 27. The displaydevice of claim 1, further comprising: a pixel circuit unit includingthe switching element; and a light blocking layer disposed between thepixel circuit unit and the common electrode and defining a lightemission area at which the light emitting layer is disposed, wherein afirst hole is defined through the pixel circuit unit, a second holecorresponding to the first hole is defined in the light blocking layer,the substrate comprises: a first layer in which a recess correspondingto the first hole is defined; and a second layer which is disposedbetween the first layer and the pixel circuit unit and in which a thirdhole between the recess and the second hole is defined, the sealingportion comprises: a cover portion disposed on the common electrode, andan extension portion extending from the cover portion and inserted intothe first hole, the second hole, the third hole, and the recess, and therecess has a width greater than a width of the third hole.
 28. Thedisplay device of claim 27, wherein the width of the recess graduallywidens along a direction from the first layer toward the second layer.29. The display device of claim 28, wherein at least one of inner wallsof the recess which face each other is inclined at a predetermined anglewith respect to an interface between the first layer and the secondlayer.
 30. The display device of claim 29, wherein an angle between theat least one of the inner walls of the recess which face each other andthe interface is an obtuse angle.
 31. The display device of claim 27,wherein the third hole is surrounded by the recess in a plan view. 32.The display device of claim 27, wherein the third hole and the recessoverlap each other.
 33. The display device of claim 27, wherein thefirst hole, the second hole, the third hole, and the recess are definedin at least one of a display area and a non-display area of thesubstrate.
 34. The display device of claim 33, wherein the first hole,the second hole, the third hole, and the recess are defined between ahigh potential line and a data line which are adjacent to each other inthe display area.
 35. The display device of claim 1, wherein the lightemitting layer comprises quantum dots.
 36. The display device of claim1, further comprising: a second switching element and a third switchingelement on the substrate; a second pixel electrode disposed on thesecond switching element and connected to the second switching element;a third pixel electrode disposed on the third switching element andconnected to the third switching element; an opposing substrate on thesealing portion; a first color conversion layer, between the sealingportion and the opposing substrate, disposed corresponding to the pixelelectrode; a second color conversion layer, between the sealing portionand the opposing substrate, disposed corresponding to the second pixelelectrode; and a light transmission layer, between the sealing portionand the opposing substrate, disposed corresponding to the third pixelelectrode, wherein the light emitting layer is disposed on the pixelelectrode, the second pixel electrode, and the third pixel electrode,the light emitting layer emits a light having a first color, the firstcolor conversion layer converts the light having the first color into alight having a second color, and the second color conversion layerconverts the light having the first color into a light having a thirdcolor.
 37. The display device of claim 36, further comprising: a firstcolor filter layer, on the opposing substrate, disposed corresponding tothe first color conversion layer; a second color filter layer, on theopposing substrate, disposed corresponding to the second colorconversion layer; and a third color filter layer, on the opposingsubstrate, disposed corresponding to the light transmission layer.
 38. Adisplay device comprising: a substrate; a switching element on thesubstrate; a pixel electrode disposed on the switching element andconnected to the switching element; a light emitting layer on the pixelelectrode; a common electrode on the light emitting layer; and a sealingportion on the common electrode, the sealing portion comprising: anorganic layer; and a first composite inorganic layer between the commonelectrode and the organic layer, the first composite inorganic layercomprising: a plurality of first inorganic layers; and a plurality ofsecond inorganic layers which are arranged alternately along a directionfrom the common electrode toward the organic layer, wherein a refractiveindex of a first inorganic layer of the plurality of first inorganiclayers and a refractive index of a second inorganic layer of theplurality of second inorganic layers are different from each other, thefirst inorganic layer and the second inorganic layer which are adjacentto each other contact each other, and a difference between therefractive index of the first inorganic layer and the refractive indexof the second inorganic layer is substantially equal to or more thanabout 0.4 so that the at least one first composite inorganic layer has atransmittance of 10% of a maximum transmittance or less of ultra-violetlight.
 39. A method of manufacturing a display device, the methodcomprising: forming a switching element on a substrate; forming a pixelelectrode on the switching element, the pixel electrode connected to theswitching element; forming a light emitting layer on the pixelelectrode; forming a common electrode on the light emitting layer; andforming a sealing portion on the common electrode, wherein the sealingportion comprises: an organic layer; and at least one first compositeinorganic layer between the common electrode and the organic layer, theat least one first composite inorganic layer comprises: a firstinorganic layer between the common electrode and the organic layer; anda second inorganic layer between the first inorganic layer and theorganic layer, a refractive index of the first inorganic layer and arefractive index of the second inorganic layer are different from eachother, and the first inorganic layer and the second inorganic layercontact each other, and a difference between the refractive index of thefirst inorganic layer and the refractive index of the second inorganiclayer is substantially equal to or more than about 0.4 so that the atleast one first composite inorganic layer has a transmittance of 10% ofa maximum transmittance or less of ultra-violet light.